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FQD1N60

600V N-Channel MOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenerg

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD1N60

600V N-Channel MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD1N60

600V N-Channel MOSFET;

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQD1N60C

功率 MOSFET,N 溝道,QFET?,600 V,1 A,11.5 ?,DPAK; ?1A, 600V, RDS(on)= 11.5Ω(最大值)@VGS = 10 V, ID = 0.5A柵極電荷低(典型值:4.8nC)\n?低 Crss(典型值3.5pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標準\n?RoHS compliant\n;

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻,并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正(PFC)及照明燈電子鎮(zhèn)流器。

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FQD1N60C

600V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD1N60C

N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD1N60C

N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQD1N60C

600V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingCoriseSemiconductor?sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance

KERSEMI

Kersemi Electronic Co., Ltd.

FQD1N60C

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FQD1N60CTM

N-Channel QFET? MOSFET 600 V, 1.0 A, 11.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

技術(shù)參數(shù)

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    600

  • VGS Max (V):

    ±30

  • VGS(th) Max (V):

    4

  • ID Max (A):

    1

  • PD Max (W):

    28

  • RDS(on) Max @ VGS = 10 V(mΩ):

    11500

  • Qg Typ @ VGS = 10 V (nC):

    4.8

  • Ciss Typ (pF):

    130

  • Package Type:

    DPAK-3/TO-252-3

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
24+
TO-252
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
華晶/FSC
2012+
TO252
999999
全新原裝進口自己庫存優(yōu)勢
詢價
華晶/FSC
2015+
TO252
19898
專業(yè)代理原裝現(xiàn)貨,特價熱賣!
詢價
FAIRCHILD
24+
TO-252(DPAK)
8866
詢價
仙童
05+
TO-252
8000
原裝進口
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
FSC
25+23+
TO-252
16687
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
FAIRC
24+
TO-252
90000
一級代理商進口原裝現(xiàn)貨、價格合理
詢價
SANYO/三洋
23+
TO-220F
69820
終端可以免費供樣,支持BOM配單!
詢價
FAIRCHILD/仙童
2023+
TO-252
2360
十五年行業(yè)誠信經(jīng)營,專注全新正品
詢價
更多FQD1N60供應(yīng)商 更新時間2025-7-31 11:38:00