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FIR9N90APG

900V N-Channel MOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FML9N90

9Amps900VoltageNChannelMOSFET

GeneralDescription ThisPowerMOSFETisproducedusingWisdom’sadvancedplanarstripe,DMOStechnology.Thislatesttechnologyhasbeenespeciallydesignedtominimizeon-stateresistance,haveahighruggedavalanchecharacteristics.Thesedevicesarewellsuitedforhighefficiencyswitchmod

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQA9N90

900VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstand

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA9N90

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA9N90C

ThinkiSemi9.0A,900VPlanarN-ChannelPowerMOSFETs

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

FQA9N90C

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA9N90C

900VN-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA9N90C

900VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA9N90C

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrentID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max) ·100AvalancheTested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Highcurrent,highspeedswit

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FQAF9N90

900VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwith

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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23+
TO-220F
10000
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First
TO-220F
22+
6000
十年配單,只做原裝
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FIRST/福斯特
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),絕對(duì)原裝 假一罰十
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FIRST/福斯特
2022+
TO-220F
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
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First
24+
TO-TO-220F
12300
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22+
N/A
2500
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23+
SMD,7.2x10.6mm
6000
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30
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24+
N/A
70000
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con
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更多FIR9N90APG供應(yīng)商 更新時(shí)間2025-1-24 14:30:00