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FGP90N30TU

300V, 90A PDP IGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

DAM90N30D

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

DAM90N30G

N-ChannelEnhancementModeMOSFET

DACO

DACO SEMICONDUCTOR CO.,LTD.

FGA90N30

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30provideslowconductionandswitchingloss.FGA90N30offerstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC=

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGA90N30D

300VPDPIGBT

Description EmployingUnifiedIGBTTechnology,FGA90N30Dprovideslowconductionandswitchingloss.FGA90N30DofferstheoptimumsolutionforPDPapplicationswherelowcondutionlossisessential. Features ?HighCurrentCapability ?Lowsaturationvoltage:VCE(sat),Typ=1.1V@IC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGFP90N30TU

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGPF90N30

300V,90APDPIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IXFK90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=90A@TC=25℃ ·DrainSourceVoltage :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFK90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

IXFN90N30

HiPerFETPowerMOSFETsSingleDieMOSFET

IXYS

IXYS Corporation

IXFR90N30

HiPerFETPowerMOSFETsISOPLUS247

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR90N30

PowerMOSFET

IXYS

IXYS Corporation

IXFX90N30

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=90A@TC=25℃ ·DrainSourceVoltage- :VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX90N30

HiPerFETPowerMOSFETs

Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect ?Fastintrinsicrectifier Applications ?DC-DCconverters ?Battery

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號：

    FGP90N30TU

  • 功能描述：

    IGBT 晶體管 300V 90A PDP IGBT

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
FSC
22+
NA
27003
全新原裝正品現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO-220
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
仙童
17+
NA
6200
100%原裝正品現(xiàn)貨
 詢價
ONSemiconductor
18+
NA
3025
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
FAIRCHILD
2017+
SMD
12000
原廠/代理渠道價格優(yōu)勢
 詢價
FAIRCHILD
22+23+
TO220F
32687
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
FAIRCHILD/仙童
22+
TO220F
18099
原裝正品現(xiàn)貨
 詢價
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價
FAIRCHI
2020+
TO-220F
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
更多FGP90N30TU供應(yīng)商 更新時間2024-10-28 9:00:00

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