首頁(yè) >FGHL75T65MQDT>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
FGHL75T65MQDT | 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-247-3 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:FS4 MID SPEED IGBT 650V 75A TO24 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
Field Stop Trench IGBT 650 V, 75 A Fieldstop4thgenerationmidspeedIGBTtechnologyFullcurrent ratedcopackDiodetechnology. Features ?MaximumJunctionTemperature:TJ=175°C ?PositiveTemperatureCo?efficientforEasyParallelOperating ?HighCurrentCapability ?LowSaturationVoltage:VCE(Sat)=1.45V(Typ.)@I | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-247-4 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:FS4 MID SPEED IGBT 650V 75A TO24 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TrenchgateField-StopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=2.1V@IC=75A ·HighSpeedSwitching ·LowPowerLoss APPLICATIONS ·IndustrialPowerSupplies ·IndustrialDrives ·SolarInverters | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
FieldStopTrenchIGBT | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
FieldStopTrenchIGBT650V,75A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT–Hybrid,FieldStop,Trench650V,75A,TO247 Usingthenovelfieldstop4thgenerationIGBTtechnologyandthe 1.5thgenerationSiCSchottkyDiodetechnology,AFGHL75T65SQDC offerstheoptimumperformancewithbothlowconductionand switchinglossesforhighefficiencyoperationsinvariousapplications, especiallytotempolebridgeless | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
HybridFieldStopTrenchIGBT650V,75A,TO247 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
FieldStopTrenchIGBT650V,75A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,75A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,75A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,75A | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop,Trench650V,75A Description UsingnovelfieldstopIGBTtechnology,ONSemiconductor’snew seriesoffieldstop4thgenerationIGBTsoffertheoptimum performanceforsolarinverter,UPS,welder,telecom,ESSandPFC applicationswherelowconductionandswitchinglossesareessential. Features ?MaxJuncti | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
http://115.22.68.60/master/PDF_DATA/ONSEMI/FGH75T65SQDT.PDF | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
650V,75AFieldStopTrenchIGBT | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
IGBT–FieldStop,Trench650V,75A Description UsinginnovativefieldstoptrenchIGBTtechnology,onsemi’snew seriesoffield?stoptrenchIGBTsofferoptimumperformanceforsolar inverter,UPS,welder,anddigitalpowergenera?torwherelow conductionandswitchinglossesareessential. Features ?MaximumJunctionTemperat | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
IGBT-FieldStop,Trench75A,650V Description Fieldstop4thgenerationLowVce(sat)IGBTtechnologyandFull currentratedcopakDiodetechnology. Features ?MaximumJunctionTemperature:TJ=175°C ?PositiveTemperatureCo?efficientforEasyParallelOperating ?HighCurrentCapability ?LowSaturationVoltage:VCE(Sat) | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
TrenchandFieldStopIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.35V@IC=75A ·HighCurrentCapability ·HighInputImpedance ·FastSwitching APPLICATIONS ·SynchronousRectificationinSMPS ·AutomotiveChargers ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
650VFieldStopIGBT GeneralDescription ThisIGBTisproducedusingadvancedMagnachip’sFieldStopTrench IGBTTechnology,whichprovideshighperformance,excellentquality andhighruggedness. Features ?Highruggednessformotorcontrol ?VCE(sat)positivetemperaturecoefficient ?Verysoft,fastrecove | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
650VFieldStopIGBT GeneralDescription ThisIGBTisproducedusingadvancedMagnachip’sFieldStopTrench IGBTTechnology,whichprovideshighperformance,excellentquality andhighruggedness. Features ?Highruggednessformotorcontrol ?VCE(sat)positivetemperaturecoefficient ?Verysoft,fastrecove | MGCHIP MagnaChip Semiconductor. | MGCHIP |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
FGHL75T65MQDT
- 制造商:
onsemi
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- IGBT 類型:
溝槽型場(chǎng)截止
- 不同?Vge、Ic 時(shí)?Vce(on)(最大值):
1.8V @ 15V,75A
- 開(kāi)關(guān)能量:
2.35mJ(開(kāi)),1.25mJ(關(guān))
- 輸入類型:
標(biāo)準(zhǔn)
- 25°C 時(shí) Td(開(kāi)/關(guān))值:
24ns/118ns
- 測(cè)試條件:
400V,75A,4.7 歐姆,15V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
通孔
- 封裝/外殼:
TO-247-3
- 供應(yīng)商器件封裝:
TO-247-3
- 描述:
FS4 MID SPEED IGBT 650V 75A TO24
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
onsemi/安森美 |
新批次 |
TO-247 |
4500 |
詢價(jià) | |||
onsemi(安森美) |
23+ |
TO-247 |
928 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價(jià) | ||
ON(安森美) |
2023+ |
TO-247-3LD |
4550 |
全新原裝正品 |
詢價(jià) | ||
ON(安森美) |
23+ |
TO-247-3LD |
9123 |
公司只做原裝正品,假一賠十 |
詢價(jià) | ||
ONSEMI |
22+ |
SMD |
2700 |
詢價(jià) | |||
ON |
24+ |
TO-247 |
5000 |
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理 |
詢價(jià) | ||
ON |
24+ |
TO-247 |
5000 |
十年沉淀唯有原裝 |
詢價(jià) | ||
ON/安森美 |
2324+ |
TO-247-3LD |
78920 |
二十余載金牌老企,研究所優(yōu)秀合供單位,您的原廠窗口 |
詢價(jià) | ||
ON |
23+ |
7800 |
全新、原裝 |
詢價(jià) | |||
ON |
23+ |
TO-247 |
20000 |
詢價(jià) |
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