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FGAF20N60SMD

600 V, 20 A Field Stop IGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’snewseriesoffieldstop2ndgenerationIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?MaximumJunctionTemperatu

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGAF20N60SMD

包裝:管件 封裝/外殼:TO-3P-3 整包 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT FIELD STOP 600V 40A TO3PF

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGB20N60SF

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGB20N60SFD

600V,20AFieldStopIGBT

GeneralDescription Usingnovelfield-stopIGBTtechnology,Fairchild’snewseriesoffield-stopIGBTsofferstheoptimumperformanceforautomotivechargers,inverters,andotherapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Lowsat

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFD

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VC

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFDTU

Highcurrentcapability,Highinputimpedance

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

FGH20N60SFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60SFDTU

IGBT-FieldStop600V,20A

Description UsingNovelFieldStopIGBTTechnology,ONSemiconductor’s newseriesofFieldStopIGBTsoffertheoptimumperformancefor AutomotiveChargers,Inverter,andotherapplicationswherelow conductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowS

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

FGH20N60UF

600V,20AFieldStopIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFD

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFDTU

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGH20N60UFDTU

600V,20AFieldStopIGBT

GeneralDescription UsingnovelfieldstopIGBTtechnology,Fairchild?’sfieldstopIGBTsoffertheoptimumperformanceforsolarinverter,UPS,welderandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?HighCurrentCapability ?LowSaturationVoltage:VCE(

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N60UFD

600V,20AFieldStopIGBT

GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FGP20N60UFDTU

600V,20AFieldStopIGBT

GeneralDescription UsingNovelFieldStopIGBTTechnology,Fairchild’snewseriesofFieldStopIGBTsoffertheoptimumperformanceforInductionHeating,UPS,SMPSandPFCapplicationswherelowconductionandswitchinglossesareessential. Features ?Highcurrentcapability ?Low

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FIR20N60AFG

600VN-ChannelMOSFET-T

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FIR20N60FG

N-ChannelPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

FML20N60

20Amps600VoltageNChannelMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

FQP20N60

600V,20AN-ChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FQPF20N60

600V,20AN-ChannelMOSFET

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

FTW20N60A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    FGAF20N60SMD

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝:

    管件

  • IGBT 類型:

    場(chǎng)截止

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    1.7V @ 15V,20A

  • 開關(guān)能量:

    452μJ(開),141μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開/關(guān))值:

    12ns/91ns

  • 測(cè)試條件:

    400V,20A,10 歐姆,15V

  • 工作溫度:

    -55°C ~ 175°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-3P-3 整包

  • 供應(yīng)商器件封裝:

    TO-3PF

  • 描述:

    IGBT FIELD STOP 600V 40A TO3PF

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
22+
TO-3PF
6000
原裝正品可支持驗(yàn)貨,歡迎咨詢
詢價(jià)
onsemi/安森美
新批次
TO-3PF
4500
詢價(jià)
onsemi(安森美)
23+
TO-3PF
928
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價(jià)
ON
24+
TO-3PF
2160
原裝現(xiàn)正品可看現(xiàn)貨
詢價(jià)
ONSEMI/安森美
2410+
TO-3PF
5000
原裝正品.假一賠百.正規(guī)渠道.原廠追溯.
詢價(jià)
ON/安森美
19+
SOT223
770
正規(guī)渠道原裝正品
詢價(jià)
ON
20+
TO-3
720
授權(quán)分銷 以芯立信 陽(yáng)帆前行
詢價(jià)
ONSemiconductor
18+
NA
3242
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
詢價(jià)
三年內(nèi)
1983
只做原裝正品
詢價(jià)
FAIRCHI
2020+
TO-3PF
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
更多FGAF20N60SMD供應(yīng)商 更新時(shí)間2024-12-22 10:16:00