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EMD10N06E

N??hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS60V RDSON(MAX.)10mΩ ID100A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

HM10N06Q

N-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

KI10N06DY

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

LMAK10N06

60VN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

MTM10N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP10N06

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTP10N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SDD10N06

DiscreteDiodes

SIRECTIFIERSirectifier Semiconductors

矽萊克電子江蘇矽萊克電子科技有限公司

SDD10N06

10AmpereHeatsinkDualTandemPolarityGeneralPurposeRectifierDiodes

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導(dǎo)體思祁半導(dǎo)體有限公司

SDP10N06

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

SK10N06

N-Channel60V(D-S)MOSFET

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

SSPR10N06-C

N-ChannelEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

TSJ10N06AT

60VN-ChannelDTMOS

WUMCWuxi Unigroup Microelectronics Company

紫光微無錫紫光微電子有限公司

TSM10N06

60VN-ChannelMOSFET

Features ●AdvanceTrenchProcessTechnology ●HighDensityCellDesignforUltraLowOn-resistance Application ●LoadSwitch ●PASwitch

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

TSM10N06CP

N-ChannelMOSFETusesadvancedtrenchtechnology

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD

杜因特深圳市杜因特半導(dǎo)體有限公司

TSM10N06CPRO

60VN-ChannelMOSFET

Features ●AdvanceTrenchProcessTechnology ●HighDensityCellDesignforUltraLowOn-resistance Application ●LoadSwitch ●PASwitch

TSCTaiwan Semiconductor Company, Ltd

臺灣半導(dǎo)體臺灣半導(dǎo)體股份有限公司

VND10N06

OMNIFETfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

VND10N06

OMNIFETfullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

VND10N06

fullyautoprotectedPowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

VND10N06

ISOHIGHSIDESMARTPOWERSOLIDSTATERELAY

Description TheVND10N06andVND10N06-1aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-2technology,intendedforreplacementofstandardPowerMOSFETsinDCto50KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclampprotectthechipinh

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

供應(yīng)商型號品牌批號封裝庫存備注價格
EXCELLIAN
23+
TO220F
28888
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
FUJITSU
2016+
SMD
3990
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
FUJITSU
SMD
10265
提供BOM表配單只做原裝貨值得信賴
 詢價
ERIDES
23+
NA
90000
一定原裝正品
 詢價
FUJITSU/富士通
08+PB
SMD
3990
向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢
 詢價
ERIDE
2020+
SMD
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
ERIDE
21+
65230
詢價
ERIDES
2102+
NA
6854
只做原廠原裝正品假一賠十!
 詢價
Erides
08+
4000
普通
 詢價
ERIDE
21+
SMD
20
原裝現(xiàn)貨假一賠十
 詢價
更多EMD10N06E供應(yīng)商 更新時間2024-10-23 9:30:00

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