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FCX1149

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)67mΩat3A

Zetex

Zetex Semiconductors

FCX1149A

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance;RCE(sat)67mΩat3A

Zetex

Zetex Semiconductors

FCX1149A

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●20Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.45mvTyp. ●Extremelylowequivalenton-resistance. RCE(sat)67mΩat3A.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FCX1149A

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features ?BVCEO=-25V ?IC=-3AContinuousCurrent ?ICM=-10APeakPulseCurrent ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FCX1149A

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance; RCE(sat)67mΩat3A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FCX1149ATA

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *20APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *ExtremelyLowSaturationVoltageE.g.45mvTyp. *ExtremelyLowEquivalentOn-resistance; RCE(sat)67mΩat3A

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits ?BVCEO>-25V ?MaximumContinuousCurrentIC=-4A ?PeakPulseCurrentIC=-10A ?HighGainHoldsUphFE>195@IC=-2A ?VeryLowEquivalentOn-Resistance;RCE(sat)=130m?at-2A ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“

DIODES

Diodes Incorporated

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits ?BVCEO>-25V ?MaximumContinuousCurrentIC=-4A ?PeakPulseCurrentIC=-10A ?HighGainHoldsUphFE>195@IC=-2A ?VeryLowEquivalentOn-Resistance;RCE(sat)=130m?at-2A ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“

DIODES

Diodes Incorporated

FZT1149A

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FEATURES *VCEO=-25V *4AmpContinuousCurrent *10AmpPulseCurrent *LowSaturationvoltage *HighGain

Zetex

Zetex Semiconductors

FZT1149ATA

PNPSILICONPLANARMEDIUMPOWERHIGHGAINTRANSISTOR

FeaturesandBenefits ?BVCEO>-25V ?MaximumContinuousCurrentIC=-4A ?PeakPulseCurrentIC=-10A ?HighGainHoldsUphFE>195@IC=-2A ?VeryLowEquivalentOn-Resistance;RCE(sat)=130m?at-2A ?Lead-FreeFinish;RoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“

DIODES

Diodes Incorporated

HFA1149

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features ?Wide-3dBBandwidth(AV=+2).............450MHz ?GainFlatness(To250MHz)...................0.8dB ?VeryFastSlewRate(AV=+2).............1100V/?s ?HighInputImpedance......................1.7M? ?Diff

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HFA1149

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features ?Wide-3dBBandwidth(AV=+2).............450MHz ?GainFlatness(To250MHz)...................0.8dB ?VeryFastSlewRate(AV=+2)..............1100V/μs ?HighInputImpedance......................1.7M? ?Di

Intersil

Intersil Corporation

HFA1149EVAL

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features ?Wide-3dBBandwidth(AV=+2).............450MHz ?GainFlatness(To250MHz)...................0.8dB ?VeryFastSlewRate(AV=+2)..............1100V/μs ?HighInputImpedance......................1.7M? ?Di

Intersil

Intersil Corporation

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Intersil

Intersil Corporation

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features ?Wide-3dBBandwidth(AV=+2).............450MHz ?GainFlatness(To250MHz)...................0.8dB ?VeryFastSlewRate(AV=+2)..............1100V/μs ?HighInputImpedance......................1.7M? ?Di

Intersil

Intersil Corporation

HFA1149IB

450MHz,LowPower,VideoOperationalAmplifierwithProgrammableOutputDisable

Features ?Wide-3dBBandwidth(AV=+2).............450MHz ?GainFlatness(To250MHz)...................0.8dB ?VeryFastSlewRate(AV=+2).............1100V/?s ?HighInputImpedance......................1.7M? ?Diff

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISF1149

N-ChannelSuper-JMOSFET

FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=65mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

K1149

5VCrystalClockOscillators

4-pinPackage,Compatiblewith14-pinDIL 40to160MHzFrequencyRange(DiscreteHigherFrequenciesAvailable DesignedtoDriveStandardECL10Kand10KHFamilies ECLandPECLOptionsAvailable DualComplementaryOutputAvailable 50?DriveCapability Internal470WOutputPull-Dow

MTRONPTI

mtronpti

K1149AA

5VCrystalClockOscillators

4-pinPackage,Compatiblewith14-pinDIL 40to160MHzFrequencyRange(DiscreteHigherFrequenciesAvailable DesignedtoDriveStandardECL10Kand10KHFamilies ECLandPECLOptionsAvailable DualComplementaryOutputAvailable 50?DriveCapability Internal470WOutputPull-Dow

MTRONPTI

mtronpti

K1149AB

5VCrystalClockOscillators

4-pinPackage,Compatiblewith14-pinDIL 40to160MHzFrequencyRange(DiscreteHigherFrequenciesAvailable DesignedtoDriveStandardECL10Kand10KHFamilies ECLandPECLOptionsAvailable DualComplementaryOutputAvailable 50?DriveCapability Internal470WOutputPull-Dow

MTRONPTI

mtronpti

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更多ECG1149供應(yīng)商 更新時間2025-1-8 17:21:00