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DS135

1.0A Power Rectifier

DiffusedJunctionTypeSiliconDiode Features ?Plasticmoldedtype. ?Peakreversevoltage:100to400V. ?Averagerectifiedcurrent:IO=1.0A.

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會社

DS1350AB

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350AB-100

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350AB-70

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350ABP-100-IND

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350ABP-70-IND

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350W

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350W-150

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350WP-150-IND

3.3V 4096K Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS1350W3.3V4096KNonvolatileSRAMisa4,194,304–bit,fullystatic,nonvolatileSRAMorganizedas524,288wordsbyeightbits.EachNVSRAMhasaself–containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout–of–tolerancecondition.Whensuch

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1350Y

4096k Nonvolatile SRAM with Battery Monitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    DS135

  • 制造商：

    DALLAS

  • 制造商全稱：

    Dallas Semiconductor

  • 功能描述：

    4096k Nonvolatile SRAM with Battery Monitor

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
MAXIM
13+
PWRCP
3738
原裝分銷
 詢價(jià)
DAL
1991
991
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
DAL
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
DALLAS
24+
DIP
4500
原裝現(xiàn)貨假一罰十
 詢價(jià)
DALLAS
05+
原廠原裝
4602
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
DALLAS
23+
DIP
9526
詢價(jià)
DALLAS
24+
2645
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
 詢價(jià)
24+
200
詢價(jià)
DALLAS
24+
12
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
DALLAS
23+
SOP16
2500
特價(jià)庫存
 詢價(jià)
更多DS135供應(yīng)商 更新時(shí)間2025-2-5 9:00:00

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