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首頁(yè)>DS1230Y-200IND+>芯片詳情
DS1230Y-200IND+ 集成電路(IC)存儲(chǔ)器 MAXIM/美信
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品參考屬性
- 類型
描述
- 產(chǎn)品編號(hào):
DS1230Y-200IND+
- 制造商:
Analog Devices Inc./Maxim Integrated
- 類別:
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 存儲(chǔ)器類型:
非易失
- 存儲(chǔ)器格式:
NVSRAM
- 技術(shù):
NVSRAM(非易失性 SRAM)
- 存儲(chǔ)容量:
256Kb(32K x 8)
- 存儲(chǔ)器接口:
并聯(lián)
- 寫周期時(shí)間 - 字,頁(yè):
200ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
-40°C ~ 85°C(TA)
- 安裝類型:
通孔
- 封裝/外殼:
28-DIP 模塊(0.600",15.24mm)
- 供應(yīng)商器件封裝:
28-EDIP
- 描述:
IC NVSRAM 256KBIT PAR 28EDIP
供應(yīng)商
- 企業(yè):
深圳市新征途電子科技有限公司
- 商鋪:
- 聯(lián)系人:
莊先生
- 手機(jī):
13049890950
- 詢價(jià):
- 電話:
13049890950
- 地址:
深圳市福田區(qū)華強(qiáng)北街道華航社區(qū)中航路7號(hào)鼎誠(chéng)國(guó)際大廈1905
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