首頁 >CY14B104LA>規(guī)格書列表
| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
CY14B104LA | 4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | |
CY14B104LA | 4-Mbit (512 K x 8/256 K x 16) nvSRAM 20 ns, 25 ns, and 45 ns access times | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | |
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4-Mbit (512 K x 8/256 K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress | ||
4 Mbit (512K x 8/256K x 16) nvSRAM FunctionalDescription TheCypressCY14B104LA/CY14B104NAisafaststaticRAM,withanonvolatileelementineachmemorycell.Thememoryisorganizedas512Kbytesof8bitseachor256Kwordsof16bitseach.TheembeddednonvolatileelementsincorporateQuantumTraptechnology,producingthewo | CypressCypressSemiconductor 賽普拉斯賽普拉斯半導(dǎo)體公司 | Cypress |
詳細(xì)參數(shù)
- 型號(hào)：
CY14B104LA
- 制造商：
CYPRESS
- 制造商全稱：
Cypress Semiconductor
- 功能描述：
4 Mbit(512K x 8/256K x 16) nvSRAM
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
CYPRESS |
2020+ |
TSOP-44 |
81 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
Cypress |
44-TSOP |
6200 |
Cypress一級(jí)分銷,原裝原盒原包裝! |
詢價(jià) | |||
MEMORY |
135 |
CYP |
135 |
詢價(jià) | |||
CYPRESS |
23+ |
NA |
3689 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553 |
詢價(jià) | ||
CYPRESS |
22+23+ |
BGA |
20867 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
CypressSemiconductorCorp |
19+ |
68000 |
原裝正品價(jià)格優(yōu)勢(shì) |
詢價(jià) | |||
CYPRESS/賽普拉斯 |
1950+ |
SOP |
6852 |
只做原裝正品現(xiàn)貨!或訂貨假一賠十! |
詢價(jià) | ||
CYPRESS |
ROHS+Original |
NA |
3689 |
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子 |
詢價(jià) | ||
CYPRESS |
2019+ |
TSOP |
6000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
Cypress Semiconductor Corp |
21+ |
96-TFBGA |
5280 |
進(jìn)口原裝!長期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠信經(jīng)營 |
詢價(jià) |
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