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F6N80

N-ChannelQFETMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

F6N80

Ultralowgatecharge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

F6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

AdvancedMOSFETprocesstechnology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

F6N80

AdvancedPowerMOSFET(220V,2.0OHM,4.5A)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

800VN-ChannelMOSFET

Good-Ark

GOOD-ARK Electronics

F6N80

N-ChannelQFET?MOSFET800V,5.5A,2.5廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA6N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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CRS
23+
TO262
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CONVERT/鍇威特
24+
TO252-2
5000
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華晶微
23+
TO-220
50000
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華晶微
2022
TO-220
80000
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CRMICRO/華潤(rùn)微
2022
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470
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HJ
2024+
TO-262
188600
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Convert Semiconductor(鍇威特半
2447
TO-220F
315000
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Convert Semiconductor(鍇威特半
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TO220F3
6000
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CONVERTSEMICONDUCTOR鍇威特半導(dǎo)
23+
TO-220
22820
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更多CS6N80ARR-G供應(yīng)商 更新時(shí)間2025-2-13 16:44:00