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F6N80

800V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

Ultra low gate charge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh?K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

F6N80

N-Channel QFET? MOSFET 800 V, 5.5 A, 2.5 廓

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

800V N-Channel MOSFET

Good-Ark

GOOD-ARK Electronics

F6N80

Advanced Power MOSFET(220V, 2.0OHM, 4.5A)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

F6N80

Advanced MOSFET process technology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

F6N80

Advanced MOSFET process technology

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微電子新硅能微電子(蘇州)有限公司

F6N80

N-Channel QFET MOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA6N80

800VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FQA6N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6.3A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.95Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
KERSEMI
TO-220F
22+
6000
十年配單,只做原裝
 詢價
DONGHAI
23+
TO-220F
80000
原裝正品,一級代理
 詢價
KERSEMI
23+
TO-220F
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
KERSEMI
23+
TO-220F
8400
專注配單,只做原裝進口現(xiàn)貨
 詢價
KERSEMI
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
ST
24+
TO-220F
200000
原裝進口正口,支持樣品
 詢價
ST
2022+
42
全新原裝 貨期兩周
 詢價
ST
19+
TO-220F
500
進口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
ST/進口原
17+
TO-220F
6200
詢價
ST/進口原
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
更多F6N80供應(yīng)商 更新時間2025-3-18 14:01:00

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