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2SC2411K

Marking:CQ;Package:SOT-346;Medium Power Transistor (32V, 0.5A)

Features 1)HighICMax.ICMax.=0.5A 2)LowVCE(sat).Optimalforlowvoltageoperation. 3)Complementsthe2SA1036K. Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導體集團

2SC2411K

Marking:CQ;Package:SOT-346;Medium Power Transistor (32V, 0.5A)

Features 1)HighICMax.ICMax.=0.5A 2)LowVCE(sat).Optimalforlowvoltageoperation. 3)Complementsthe2SA1036K. Structure Epitaxialplanartype NPNsilicontransistor

ROHMRohm

羅姆羅姆半導體集團

AP3428DNTR-G1

Marking:CQ;Package:U-DFN2020-6;1.5MHZ, 1A STEP-DOWN DC-DC BUCK CONVERTER

Features -OutputCurrent:Upto1A -OutputVoltage:0.6VtoVIN -InputVoltage:2.5Vto5.5V -0.6VReferenceVoltagewith±2Precision -40μA(typ)NoLoadQuiescentCurrent -ShutdownCurrent:

DIODES

Diodes Incorporated

BZT52-C22

Marking:CQ;Package:SOD123;Single Zener diodes in a SOD123 package

1.1Generaldescription General-purposeZenerdiodesinaSOD123smallSurface-MountedDevice(SMD) plasticpackage. 1.2Featuresandbenefits ?Totalpowerdissipation:≤590mW ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Smallplasticpackagesuitableforsurface-mo

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BZT52-C22-Q

Marking:CQ;Package:SOD123;Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123smallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤590mW ?Twotoleranceseries:±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.4Vto7

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

FTC2411K-Q

Marking:CQ;Package:SOT-23;Medium Power Transistor NPN silicon

MediumPowerTransistor NPNsilicon FEATURE ●Epitaxialplanartype ●ComplementarytoFTA1036K

FS

First Silicon Co., Ltd

NCS213RMUTAG

Marking:CQ;Package:UQFN10;Current-Shunt Monitors, Voltage Output, Bidirectional Zero-Drift, Low- or High-Side Current Sensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NCS213RMUTAG

Marking:CQ;Package:UQFN10;Current-Shunt Monitors, Voltage Output, Bidirectional, Zero-Drift, Low- or High-Side Current Sensing

TheNCS210R,NCS211R,NCS213RandNCS214Rarevoltage output,currentshuntmonitors(alsocalledcurrentsenseamplifiers) whichcanmeasurevoltageacrossshuntsatcommon?modevoltages from?0.3Vto26V,independentofsupplyvoltage.Thelowoffsetof thezero?driftarchitectureenables

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NZH5V6B

Marking:CQ;Package:SOD123F;Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD123FsmallandflatleadSurface-Mounted Device(SMD)plasticpackage. 1.2Features 1.3Applications Generalregulationfunctions Totalpowerdissipation:≤500mWSmallplasticpackagesuitablefor surface-mounteddesign Wid

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

P6SMB43CA

Marking:CQ;SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導體股份有限公司

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