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D2004UK

METALGATERFSILICONFET

GOLDMETALLISEDMULTI-PURPOSESILICONDMOSRFFET 10W–28V–1GHzPUSH–PULL FEATURES ?SIMPLIFIEDAMPLIFIERDESIGN ?SUITABLEFORBROADBANDAPPLICATIONS ?VERYLOWCrss ?SIMPLEBIASCIRCUITS ?LOWNOISE ?HIGHGAIN–10dBMINIMUM APPLICATIONS ?HF/VHF/UHFCOMMUNICATIONSfromDCto2

SEME-LAB

Seme LAB

DG2004

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

DESCRIPTION TheDG2003/2004/2005aredualsingle-pole/single-throwmonolithicCMOSanalogswitchdesignedforhighperformanceswitchingofanalogsignals.Combininglowpower,fastswitching,lowon-resistance(rDS(on):1.2Ω)andsmallphysicalsize(MSOP-8),theDG2003/2004/2005areidealfor

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG2004DQ

Low-VoltageDualSPSTAnalogSwitch

features LowVoltageOperation(1.8Vto5.5V) LowOn-Resistance-rDS(on):1.2 FastSwitching-14ns LowChargeInjection-QINJ:1pC LowPowerConsumption TTL/CMOSCompatible MSOP-8Package benefits ReducedPowerConsumption SimpleLogicInterface HighAccur

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DMC2004DWK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am

DIODES

Diodes Incorporated

DMC2004LPK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMC2004VK

COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr

DIODES

Diodes Incorporated

DMN2004DMK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?LoadSwitch Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGate

DIODES

Diodes Incorporated

DMN2004DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004DWKQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance:RDS(on)=550(max)m?@VGS=4.5V

DIODES

Diodes Incorporated

DMN2004K

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004TK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”D

DIODES

Diodes Incorporated

DMN2004VK

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DIODES

Diodes Incorporated

DMN2004WK

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedupto2KV ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu

DIODES

Diodes Incorporated

DMN2004WK

N-CHANNELENHANCEMENTMODEMOSFET

DIODES

Diodes Incorporated

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CENTRALSEMI
2019+PB
SOT-26
33000
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Centralsemi
19+
SOT-26
200000
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Centralsemi
20+
SOT-26
36800
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Centralsemi
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Centralsemi
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18800
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CENTRAL
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CENTRAL
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9600
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Central
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NA
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Centralsemi
24+
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SOT23
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更多CMXD2004TOTR供應(yīng)商 更新時(shí)間2024-11-7 15:46:00

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