首頁 >DMC2004DWK>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
DMC2004DWK | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | DIODES | |
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th)?1V ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ComplementaryPairMOSFET ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes2&am | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
COMPLEMENTARYPAIRENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance ?LowGateThresholdVoltageVGS(th) | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?Ultra-SmallSurfaceMountPackage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Gr | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. ?LoadSwitch Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGate | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisnewgenerationMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. FeaturesandBenefits ?LowOn-Resistance:RDS(on)=550(max)m?@VGS=4.5V | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?DualN-ChannelMOSFET ?LowOn-Resistance ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?Ultra-SmallSurfaceMountPackage ?ESDProtectedGate ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”D | DIODES Diodes Incorporated | DIODES | ||
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance:RDS(ON) ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?ESDProtectedupto2KV ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qu | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES | ||
N-ChannelEnhancementModeMOSFET | TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司 | TECHPUBLIC | ||
N-CHANNELENHANCEMENTMODEMOSFET | DIODES Diodes Incorporated | DIODES |
詳細(xì)參數(shù)
- 型號(hào):
DMC2004DWK
- 制造商:
Diodes Incorporated
- 功能描述:
MOSFET NP CH W DIODE 20V SOT363
- 功能描述:
MOSFET, NP CH, W DIODE, 20V, SOT363
- 功能描述:
MOSFET, NP CH, W DIODE, 20V, SOT363; Transistor
- Polarity:
N and P Channel; Continuous Drain Current
- Id:
540mA; Drain Source Voltage
- Vds:
20V; On Resistance
- Rds(on):
0.4ohm; Rds(on) Test Voltage
- Vgs:
4.5V; Power Dissipation
- Pd:
250mW ;RoHS
- Compliant:
Yes
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DIODES |
2020+ |
SOT363 |
18600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
DIODES |
2017+ |
SOT363 |
6528 |
只做原裝正品假一賠十! |
詢價(jià) | ||
DiodesInc |
23+ |
NA |
126 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
DIODES/美臺(tái) |
22+ |
SOT363 |
90000 |
正規(guī)代理渠道假一賠十 |
詢價(jià) | ||
DIODES/美臺(tái) |
2021+ |
SOT26 |
100500 |
一級(jí)代理專營品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
Diodes(美臺(tái)) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) | ||
DIODES |
23+ |
SOT-363 |
3000 |
原裝正品假一罰百!可開增票! |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
NA |
30000 |
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談 |
詢價(jià) | ||
DIODES/美臺(tái) |
22+ |
SOT-363 |
34600 |
原裝正品 |
詢價(jià) | ||
Diodes(美臺(tái)) |
23+ |
標(biāo)準(zhǔn)封裝 |
12000 |
正規(guī)渠道,只有原裝! |
詢價(jià) |
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