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MTV10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerFieldEffectTransistorD3PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD3PAKpackagehasthecapabilityofhousingthelargestchipsizeofanystandard,plastic,surfacemountpowersemiconductor.Thisallowsittobeusedinapplicationsthatrequiresurfa

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTV10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW10N100E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTW10N100E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTW10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE?FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N?ChannelEnhancement?ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMO

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTY10N100E

TMOSPOWERFET10AMPERES1000VOLTSRDS(on)=1.3OHM

TMOSE-FETPowerEieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

RM10N100LD

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures Vos=100Vl0=10A Rosin)

RECTRON

Rectron Semiconductor

SFF10N100B

10AMP/1000Volts1.2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF10N100M

10AMP/1000Volts1.2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

SFF10N100N

10AMP1000Volts1.2ohmN-ChannelPowerMOSFET

SSDI

Solid States Devices, Inc

詳細(xì)參數(shù)

  • 型號：

    CIL10N100KBE

  • 功能描述：

    It has ferrite and 100% Ag as internal conductors, the CIL Series has excellent Q characteristics and eliminate crosstalk.

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
2002
O603
4000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
SAMSUNG/三星
2023+
O603
48000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價
SAMSUNG
24+
SMD
172500
一級代理/全新現(xiàn)貨/長期供應(yīng)!
 詢價
SAMSUNG
20+
電感器
120000
就找我吧!--邀您體驗愉快問購元件!
 詢價
SAMSUNG/三星
23+
SMD
140000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
SAMSUNG
23+
SMD
4982
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
SAMSUNG
23+
SMD
4982
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
SAMSUNG/三星
22+
SMD
140000
原裝現(xiàn)貨樣品可售
 詢價
SAMSUNG/三星
15+ROHS
SMD
356500
一級質(zhì)量保證長期穩(wěn)定提供貨優(yōu)價美
 詢價
SAMSUNG/三星
24+
O603
60000
全新原裝現(xiàn)貨
 詢價
更多CIL10N100KBE供應(yīng)商 更新時間2025-4-12 14:06:00

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