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首頁 >CEU83A3>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEU83A3	文件：141.76 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEU83A3	文件：895.6 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEU83A3	文件：1.01372 Mbytes Page：4 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CEU83A3G	文件：421.09 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEB83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEB83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3	文件：141.76 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,80A,RDS(ON)=6m?@VGS=10V. RDS(ON)=9m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CED83A3	文件：895.6 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,80A,RDS(ON)=6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CED83A3G	文件：421.09 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,93A,RDS(ON)=4.8mΩ@VGS=10V. RDS(ON)=7.4mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP83A3	文件：100.44 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3m?@VGS=10V. RDS(ON)=8.0m?@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP83A3	文件：651.05 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,100A,RDS(ON)=5.3mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=8.0mW@VGS=4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：735.63 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,102A,RDS(ON)=4.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=6.2mW@VGS=4.5V. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP83A3G	文件：401.69 Kbytes Page：4 Pages	N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■30V,102A,RDS(ON)=4.5mΩ@VGS=10V. RDS(ON)=7.0mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CHM83A3PAPT	文件：345.44 Kbytes Page：3 Pages	N-ChannelEnhancementModeFieldEffectTransistor VOLTAGE30VoltsCURRENT80Ampere FEATURE Smallpackage.(TO-252A) SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. APPLICATION Servomotorcontrol. PowerMOSFETgatedrivers. Otherswitchingapplications.	CHENMKOchenmko 力勤股份有限公司	CHENMKO

詳細參數(shù)

型號：
CEU83A3
制造商：
CET
制造商全稱：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市益百分電子有限公司	CEU83A3	華晶替代	TO220	80000000	2012		詢價
深圳市匯萊威科技有限公司	CEU83A3	CET/華瑞	24+	TO-252	499579	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市凱斯宇科技有限公司	CEU83A3	CET	2022	TO252	2058	原廠原裝正品,價格超越代理	詢價
深圳市毅創(chuàng)騰電子科技有限公司	CEU83A3	CET	23+	TO252	7000	絕對全新原裝!100%保質(zhì)量特價!請放心訂購!	詢價
深圳市一線半導(dǎo)體有限公司	CEU83A3	CET	24+	TO252	219		詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	CEU83A3	SR	23+	TO-252	5000	原裝正品,假一罰十	詢價
深圳市宇集芯電子有限公司	CEU83A3	CET	24+	TO-252	90000	進口原裝現(xiàn)貨假一罰十價格合理	詢價
深圳市卓越微芯電子有限公司	CEU83A3	CET	2020+	TO-252	9500	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市新力誠科技有限公司	CEU83A3	原廠	2020+	TO-252	20000	公司代理品牌,原裝現(xiàn)貨超低價清倉!	詢價
中天科工半導(dǎo)體（深圳）有限公司	CEU83A3	CETSEMI	20+	TO-252	63258	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價

更多CEU83A3供應(yīng)商更新時間2024-10-26 14:30:00

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