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CEU60P03

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-60A,RDS(ON)=9mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達(dá)廣東匯利達(dá)半導(dǎo)體有限公司

HLDD60P03

P-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

LMAK60P03

-30VP-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

NCE60P03R

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Rusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforuseasaloadswitchorinPWMapplications.Application ●Loadswitch ●PWMapplication GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE60P03Y

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE60P03Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforuseasaloadswitchorinPWM applications. GeneralFeatures ●VDS=-60V,ID=-3A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

RFG60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features ?60A,30V ?rDS(ON)=0.027? ?TemperatureCompensatingPSPICE?Model ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFG60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFP60P03

60A,30V,0.027Ohm,P-ChannelPowerMOSFETs

TheseP-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFP60P03

60A,30V,AvalancheRated,P-ChannelEnhancement-ModePowerMOSFETs

Features ?60A,30V ?rDS(ON)=0.027? ?TemperatureCompensatingPSPICE?Model ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingSurfaceMountComponentstoPCBoards”

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
23+
TO-252
360000
交期準(zhǔn)時(shí)服務(wù)周到
 詢價(jià)
CET華瑞/臺灣中臺科技
24+
TO-252
60000
全新原裝現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
TO252
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
CET/華瑞
2022+
TO-252
23005
原廠代理 終端免費(fèi)提供樣品
 詢價(jià)
CET/華瑞
23+
NA/
26255
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價(jià)
CET/華瑞
23+
TO-252
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
TO-252
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
CET
25+
TO-252
13574
原裝正品,假一罰十!
 詢價(jià)
SR
23+
TO-252
5000
原裝正品,假一罰十
 詢價(jià)
更多CEU60P03供應(yīng)商 更新時(shí)間2025-3-28 10:35:00

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