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CEU20P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-16A,RDS(ON)=130mΩ@VGS=-10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU20P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-16A,RDS(ON)=130mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

F20P10G

P-ChannelEnhancementMOSFET

Features ?VDS=-100V,ID=-20A ?RDS(ON)=86mΩ@VGS=-10V(Typ.) ?RDS(ON)=90mΩ@VGS=-4.5V(Typ.) ?HighPowerandcurrenthandingcapability ?Leadfreeproductisacquired ?SurfaceMountPackage MainApplications ?BatteryProtection ?LoadSwitch ?PowerManagement

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

G20P10KE

P-ChannelEnhancementModePowerMOSFET

Description TheG20P10KEusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

MCU20P10

P-ChannelEnhancementModeFieldEffectTransistor

MCCMicro Commercial Components

美微科美微科半導體股份有限公司

MTH20P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTM20P10

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTM20P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-20A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTM20P10

PowerFieldEffectTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

NCE20P10J

NCEP-ChannelEnhancementModePowerMOSFET

Description TheNCE20P10Jusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltages.Thisdeviceissuitableforuseasaloadswitching applicationandawidevarietyofotherapplications. GeneralFeatures ●VDS=-20V,ID=-10A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

供應商型號品牌批號封裝庫存備注價格
CEU
24+
TO-252
5000
只做原廠渠道 可追溯貨源
詢價
CET
20+
TO-252
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
CET
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
CET
21+
TO-252
14970
原裝現(xiàn)貨假一賠十
詢價
CET/華瑞
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
CET/華瑞
2022+
TO-252
24115
原廠代理 終端免費提供樣品
詢價
CEU
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
CET
23+
TO-252
6000
原裝正品,支持實單
詢價
CET/華瑞
22+
TO-252
50000
只做原裝假一罰十,歡迎咨詢
詢價
CEU
18+
TO-252
5000
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詢價
更多CEU20P10供應商 更新時間2025-3-22 16:36:00