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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
CEP50N06	文件：636.35 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,50A,RDS(ON)=22mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06	文件：391.29 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■60V,50A,RDS(ON)=17mΩ(typ)@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP50N06	文件：1.4536 Mbytes Page：6 Pages	50A,60V Heatsink Planar N-Channel Power MOSFET GeneralDescription ThisN-channelenhancementmodefield-effectpowertransistorusingTHINKISemiconductoradvancedplanarstripe,DMOStechnologyintendedforoff-lineswitchmodepowersupply.Also,especiallydesignedtominimizerds(on)andhighruggedavalanchecharacteristics.TheTO-220M	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
CEP50N06G	文件：587.93 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V,55A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N10	文件：430.82 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,50A,RDS(ON)=30mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-220&TO-263package. ■Leadfreeproductisacquired.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP50N10	文件：642.37 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,50A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50P03	文件：104.25 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-30V,-47A,RDS(ON)=20m?@VGS=-10V. RDS(ON)=32m?@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP50P03	文件：900.88 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V,-47A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RDS(ON)=32mW@VGS=-4.5V. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP5175	文件：683.38 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■-55V,-50A,RDS(ON)=23mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Lead-freeplating;RoHScompliant. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP5175	文件：503.67 Kbytes Page：4 Pages	P-Channel Enhancement Mode Field Effect Transistor FEATURES -55V,-50A,RDS(ON)=23mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=28mW@VGS=4.5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP51A3	文件：103.92 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■30V,48A,RDS(ON)=16.5m?@VGS=10V. RDS(ON)=28m?@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP540A	文件：101.68 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,36A,RDS(ON)=48m?@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP540L	文件：633.43 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=50mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. RDS(ON)=53mW@VGS=5V.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP540N	文件：412.7 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■100V,36A,RDS(ON)=53mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP540N	文件：585.01 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP550	文件：643.01 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,33A,RDS(ON)=40mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP550A	文件：766.08 Kbytes Page：5 Pages	N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V,36A,RDS(ON)=53mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant.	CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司	CET-MOS
CEP50N06	文件：1.14917 Mbytes Page：4 Pages	N-Channel MOSFET uses advanced trench technology	DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司	DOINGTER
CEP540L	文件：687.08 Kbytes Page：4 Pages	N-Channel Enhancement Mode Field Effect Transistor	CETChino-Excel Technology 華瑞華瑞股份有限公司	CET
CEP5710	文件：24.21 Kbytes Page：1 Pages	ISDN S-Bus Common Mode Inductor	FILTRANFILTRAN Group 費(fèi)爾蘭特	FILTRAN

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詳細(xì)參數(shù)

型號：
CEP5
制造商：
CET
制造商全稱：
Chino-Excel Technology
功能描述：
N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市明嘉萊科技有限公司	CEP50N06	CET/華瑞	24+	TO-220	156757	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	CEP50N06	CET	23+	TO220/3	7000	絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	CEP50N06	CET品牌	2016+	TO-220	6528	房間原裝進(jìn)口現(xiàn)貨假一賠十	詢價(jià)
深圳市凱斯宇科技有限公司	CEP50N06	CET	2022	TO220/3	2058	原廠原裝正品,價(jià)格超越代理	詢價(jià)
齊創(chuàng)科技(上海,北京,青島)有限公司	CEP50N06	ROHM	23+	TO220	5000	原裝正品,假一罰十	詢價(jià)
深圳市一線半導(dǎo)體有限公司	CEP50N06	CET	24+	TO2203	150		詢價(jià)
深圳市凌旭科技有限公司	CEP50N06	CET	2016+	TO-220	3500	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳市鵬和科技有限公司	CEP50N06	CET	24+	TO-220	5000	只做原裝公司現(xiàn)貨	詢價(jià)
深圳宇航軍工半導(dǎo)體有限公司	CEP50N06	CET	19+	TO-220	67758	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價(jià)
深圳市華來深電子有限公司	CEP50N06	CET	23+	TO-220	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)

更多CEP5供應(yīng)商更新時(shí)間2024-11-17 15:40:00

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