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CEN2310L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,4.8A,RDS(ON)=34mW@VGS=10V. RDS(ON)=40mW@VGS=4.5V. RDS(ON)=45mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=60mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2315

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-4A,RDS(ON)=50mW@VGS=-10V. RDS(ON)=85mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.7A,RDS(ON)=60mW@VGS=-4.5V. RDS(ON)=80mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2321B

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.9A,RDS(ON)=52mW@VGS=-4.5V. RDS(ON)=72mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2333

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3.2A,RDS(ON)=78mW@VGS=-4.5V. RDS(ON)=110mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=150mW@VGS=-1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2362

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,3A,RDS(ON)=80mW@VGS=10V. RDS(ON)=100mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2364

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,2.5A,RDS(ON)=110mW@VGS=10V. RDS(ON)=130mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2365

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V,-2A,RDS(ON)=160mW@VGS=-10V. RDS(ON)=208mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN7002A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,0.25A,RDS(ON)=3?@VGS=10V. RDS(ON)=4?@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23-Tpackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEN7002A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V,0.25A,RDS(ON)=3W@VGS=10V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Leadfreeproductisacquired. RDS(ON)=4W@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+24
TO-18
29850
原裝原盤(pán)原標(biāo).保證每一片都來(lái)自原廠
 詢價(jià)
ST
2315+
TO-18
3868
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢價(jià)
ST
21+
TO-18
23480
詢價(jià)
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
CET
23+
SOT-23-T
63000
原裝正品現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SK
22+
SOT-23
52800
原裝正品
 詢價(jià)
CET/華瑞
23+
SOT-23T
294678
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
 詢價(jià)
CET/華瑞
20+
SOT-23
120000
只做原裝 可免費(fèi)提供樣品
 詢價(jià)
CET/華瑞
22+
SOT-23
50000
只做原裝假一罰十,歡迎咨詢
 詢價(jià)
更多CEN供應(yīng)商 更新時(shí)間2025-3-31 10:18:00

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