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CEN2301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-2.7A,RDS(ON)=110mW@VGS=-4.5V. RDS(ON)=160mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEN2301A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-20V,-2.8A,RDS(ON)=100mΩ@VGS=-4.5V. RDS(ON)=150mΩ@VGS=-2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CES2301

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?LoadSwitch ?PASwitch ?DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CES2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-2.8A,RDS(ON)=100mW@VGS=-4.5V. RDS(ON)=150mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2301A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-3A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEV2301

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-1.3A,RDS(ON)=110mW@VGS=-4.5V. RDS(ON)=160mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEV2301A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -20V,-1.5A,RDS(ON)=90mW@VGS=-4.5V. RDS(ON)=120mW@VGS=-2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-323package. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CHT2301PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.3Ampere FEATURE *Smallsurfacemountingtype.(SC-59/SOT-346) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *

CHENMKOchenmko

力勤股份有限公司

CHT2301WPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE20VoltsCURRENT2.3Ampere FEATURE ???????*Smallsurfacemountingtype.(SC-70/SOT-323) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICAT

CHENMKOchenmko

力勤股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
CET/華瑞
20+
SOT-23
120000
原裝正品 可含稅交易
 詢價(jià)
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
CET
23+
SOT-23-T
63000
原裝正品現(xiàn)貨
 詢價(jià)
CET/華瑞
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
SK
22+
SOT-23
52800
原裝正品
 詢價(jià)
CET/華瑞
23+
SOT-23T
294678
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
CET/華瑞
22+
SOT-23
50000
只做原裝假一罰十,歡迎咨詢
 詢價(jià)
CET
SOT-23
50000
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨
 詢價(jià)
CET/華瑞
23+
NA/
15000
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
原裝CET
23+
SOT-23
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
更多CEN2301供應(yīng)商 更新時(shí)間2025-3-17 14:01:00

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