| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
CED3112 | N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
150mA/1.2VCMOSLDORegulator ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50?powergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ | CALMIRCO California Micro Devices Corp | CALMIRCO | ||
DC/DCConverterApplications DC/DCConverterApplications Features ?AdoptionofMBITprocesses. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.9mm). ?Highallowablepowerdissipation. Applications ?Relaydriv | SANYOSanyo Semicon Device 三洋三洋電機(jī)株式會社 | SANYO | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features ?LowOn-Resistance: ?57m?@VGS=10V ?112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device( | DIODES Diodes Incorporated | DIODES | ||
N-CHANNELENHANCEMENTMODEMOSFET Features ?LowOn-Resistance: 57m?@VGS=10V 112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note1) ?GreenDevice(Note2) ?QualifiedtoAEC-Q101StandardsforHigh | ZPSEMI ZP Semiconductor | ZPSEMI | ||
SINGLEN-CHANNELENHANCEMENTMODEMOSFET Features ?LowOn-Resistance ?57m?@VGS=10V ?112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?LeadFreeByDesign/RoHSCompliant(Note2) ?GreenDevice(Note4) ?QualifiedtoAEC-Q101StandardsforHi | DIODES Diodes Incorporated | DIODES | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | DallasDallas Semiconductor 亞德諾亞德諾半導(dǎo)體 | Dallas | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
TEMPET3/E3Multiplexer3.3VT3/E3FramerandM13/E13/G.747Mux | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
DS3/E3MultiplexerReferenceDesign | MaximMaxim Integrated Products 美信美信半導(dǎo)體 | Maxim | ||
CONTENTS | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
HIgh-PowerMOStubedriverchip | EGMICROJingjing Microelectronics Co., Ltd 屹晶微電子屹晶微電子有限公司 | EGMICRO |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SR |
23+ |
TO-251 |
7015 |
原裝正品,假一罰十 |
詢價 | ||
VBsemi |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
CET |
23+ |
原廠原包 |
19960 |
只做進(jìn)口原裝 終端工廠免費(fèi)送樣 |
詢價 | ||
CET(華瑞) |
2112+ |
TO-251(I-PAK) |
105000 |
80個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
VBsemi/臺灣微碧 |
21+ |
TO-251 |
7156 |
原裝現(xiàn)貨假一賠十 |
詢價 | ||
CET/華瑞 |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢價 | ||
CET/華瑞 |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VBsemi |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
C |
TO-251 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
C |
23+ |
TO-251 |
6000 |
原裝正品，支持實(shí)單 |
詢價 |
相關(guān)規(guī)格書
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- CED4060AL
- CED40N10
- CED40N20
- CED4175
- CED4201
- CED4204
- CED4279
- CED4301
- CED4301
- CED4311
- CED50N06
- CED50N06G
- CED5175
- CED540A
- CED540L
- CED540N
- CED55N10
- CED55N15
- CED6030L
- CED6036L
- CED6042
- CED6056
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- CED6060N
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