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ED603CT

SUPERFASTRECOVERYRECTIFIERS

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

ELM603

1.5A1.5MHzhighefficiencyPWMstepdownDC/DCconverter

ELM

ELM Electronics

ER603

SUPERFASTRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Superfastswitchingforhighefficiency Lowreverseleakage Highforwardsurgecurrentcapability Hightemperaturesolderingguaranteed: 250C/10seconds,0.375”(9.5mm)leadlength, 5lbs.(2.3kg

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

ER603DC

DPAKSURFACEMOUNTSUPERFASTRECTIFIER

FEATURES ●Forsurfacemountedapplications ●Lowprofilepackage ●Built-instrainrelief ●Easypickandplace ●Superfastrecoverytimesforhighefficiency ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ●Glasspassivatedjunction ●Hightemperaturesol

TRSYS

Transys Electronics

FDB603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDD603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=23mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmod

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FDP603AL

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannellogiclevelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistance.Thesedevicesareparticularlysuit

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP603AL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=22mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconv

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

FG603

6.0AmpMINIATUREPLASTICSILICONRECTIFIERSLOWCOSTLOWLEAKAGE

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    C603D

  • 制造商：

    JOHANSON

  • 制造商全稱：

    Johanson Technology Inc.

  • 功能描述：

    RF Ceramic Component Proto-Typing Kits

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PHYCOMP
20+
884
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N/A
23+
80000
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N/A
23+
80000
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CAROLCABLE
新
100
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2022+
68
全新原裝 貨期兩周
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TELEDYNE
2013+
DIP6
3882
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General
1935+
N/A
55
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更多C603D供應(yīng)商 更新時(shí)間2025-4-24 10:00:00

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