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FDB603AL中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

FDB603AL
廠商型號(hào)

FDB603AL

功能描述

N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件大小

414.53 Kbytes

頁(yè)面數(shù)量

4 頁(yè)

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-2-5 10:22:00

FDB603AL規(guī)格書(shū)詳情

General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V.

■ Critical DC electrical parameters specified at elevated temperature.

■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

■ High density cell design for extremely low RDS(ON).

■ 175°C maximum junction temperature rating.

產(chǎn)品屬性

  • 型號(hào):

    FDB603AL

  • 功能描述:

    MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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onsemi(安森美)
23+
TO-263AB
8357
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F
24+
TO-263AB
5000
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9600
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TO-263AB
10000
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SOT-263
12888
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546
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