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BYW29F200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

DESCRIPTION SinglechiprectifiersuitedforswitchmodepowersupplyandhighfrequencyDCtoDCconverters.PackagedinTO-220ACorISOWATT220ACthisdeviceisintendedforuseinlowvoltage,highfrequencyinverters,freewheelingandpolarityprotectionapplications. FEATURES ■SUITEDFORS

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

FT29F200CT

2M-BIT[256Kx8/128Kx16]SINGLEVOLTAGE5VONLYFLASHMEMORY

FORCE

Force Technologies Ltd

M29F200

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M29F200

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M29F200B

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M29F200BB

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology

鎂光美國鎂光科技有限公司

M29F200BB

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M29F200BT

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

M29F200BT

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology

鎂光美國鎂光科技有限公司

M29F200FB

Top/BottomBootBlock5VSupplyFlashMemory

NUMONYX

numonyx

M29F200FT

Top/BottomBootBlock5VSupplyFlashMemory

NUMONYX

numonyx

M29F200T

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

MBM29F200TC

2M(256KX8/128KX16)BIT

■GENERALDESCRIPTION TheMBM29F200TC/BCisa2M-bit,5.0V-onlyFlashmemoryorganizedas256Kbytesof8bitseachor128Kwordsof16bitseach.TheMBM29F200TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5

FujitsuFujitsu Component Limited.

富士通富士通株式會社

MX29F200CB

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

FEATURES GENERALFEATURES ?SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations ?262,144x8/131,072x16switchable ?BootSectorArchitecture -T=TopBootSector -B=BottomBootSector ?SectorStructure -16K-Byte

MCNIXMacronix International

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MX29F200CT

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

FEATURES GENERALFEATURES ?SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations ?262,144x8/131,072x16switchable ?BootSectorArchitecture -T=TopBootSector -B=BottomBootSector ?SectorStructure -16K-Byte

MCNIXMacronix International

????????????旺宏????????????旺宏電子

MX29F200T

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

GENERALDESCRIPTION TheMX29F200T/Bisa2-megabit,single5VoltFlashmemoryorganizedas1Mwordx16or2Mbytex8MXICsFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheMX29F200T/Bispackagedin44-pinSOPand48-pinTSOP.Itisdes

MCNIXMacronix International

????????????旺宏????????????旺宏電子

詳細參數(shù)

  • 型號：

    BYW29F200

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱：

    STMicroelectronics

  • 功能描述：

    HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

供應商型號品牌批號封裝庫存備注價格
PHILIPS
24+
N/A
4000
原裝原廠代理 可免費送樣品
 詢價
PHILIPS
2016+
N/A
6528
只做進口原裝現(xiàn)貨!假一賠十!
 詢價
ST/進口原
17+
TO220F-2
6200
詢價
PHILIPS
23+
N/A
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
PHILIPS
22+23+
NA
20917
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
ST
20+
TO220F-2
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
PHILIPS
2020+
N/A
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
PHI
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
PHILIPS
21+
N/A
90
原裝現(xiàn)貨假一賠十
 詢價
ST/意法
23+
TO220F-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多BYW29F200供應商 更新時間2024-10-28 15:09:00

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