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BYW29F200

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

DESCRIPTION SinglechiprectifiersuitedforswitchmodepowersupplyandhighfrequencyDCtoDCconverters.PackagedinTO-220ACorISOWATT220ACthisdeviceisintendedforuseinlowvoltage,highfrequencyinverters,freewheelingandpolarityprotectionapplications. FEATURES ■SUITEDFORS

STMICROELECTRONICSSTMicroelectronics

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FT29F200CT

2M-BIT[256Kx8/128Kx16]SINGLEVOLTAGE5VONLYFLASHMEMORY

FORCE

Force Technologies Ltd

M29F200

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

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M29F200

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

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M29F200B

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

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M29F200BB

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

M29F200BB

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

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M29F200BT

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

M29F200BT

2Mbit(256Kbx8or128Kbx16,BootBlock)SingleSupplyFlashMemory

Description TheM29F200Bisa2Mbit(256Kbx8or128Kbx16)non-volatilememorythatcanberead,erasedandreprogrammed.Theseoperationscanbeperformedusingasingle5Vsupply.Onpower-upthememorydefaultstoitsReadmodewhereitcanbereadinthesamewayasaROMorEPROM.TheM2

MicronMicron Technology

鎂光美國(guó)鎂光科技有限公司

M29F200FB

Top/BottomBootBlock5VSupplyFlashMemory

NUMONYX

numonyx

M29F200FT

Top/BottomBootBlock5VSupplyFlashMemory

NUMONYX

numonyx

M29F200T

2Mbit256Kbx8or128Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MBM29F200TC

2M(256KX8/128KX16)BIT

■GENERALDESCRIPTION TheMBM29F200TC/BCisa2M-bit,5.0V-onlyFlashmemoryorganizedas256Kbytesof8bitseachor128Kwordsof16bitseach.TheMBM29F200TC/BCisofferedina48-pinTSOPand44-pinSOPpackages.Thisdeviceisdesignedtobeprogrammedin-systemwiththestandardsystem5

FujitsuFujitsu Component Limited.

富士通富士通株式會(huì)社

MX29F200CB

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

FEATURES GENERALFEATURES ?SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations ?262,144x8/131,072x16switchable ?BootSectorArchitecture -T=TopBootSector -B=BottomBootSector ?SectorStructure -16K-Byte

MCNIXMacronix International

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MX29F200CT

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

FEATURES GENERALFEATURES ?SinglePowerSupplyOperation -4.5to5.5voltforread,erase,andprogramoperations ?262,144x8/131,072x16switchable ?BootSectorArchitecture -T=TopBootSector -B=BottomBootSector ?SectorStructure -16K-Byte

MCNIXMacronix International

????????????旺宏????????????旺宏電子

MX29F200T

2M-BIT[256Kx8/128Kx16]CMOSFLASHMEMORY

GENERALDESCRIPTION TheMX29F200T/Bisa2-megabit,single5VoltFlashmemoryorganizedas1Mwordx16or2Mbytex8MXICsFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheMX29F200T/Bispackagedin44-pinSOPand48-pinTSOP.Itisdes

MCNIXMacronix International

????????????旺宏????????????旺宏電子

詳細(xì)參數(shù)

  • 型號(hào)：

    BYW29F200

  • 制造商：

    STMICROELECTRONICS

  • 制造商全稱(chēng)：

    STMicroelectronics

  • 功能描述：

    HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHILIPS
24+
N/A
4000
原裝原廠代理 可免費(fèi)送樣品
 詢(xún)價(jià)
PHILIPS
2016+
N/A
6528
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢(xún)價(jià)
ST/進(jìn)口原
17+
TO220F-2
6200
詢(xún)價(jià)
PHILIPS
23+
N/A
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
 詢(xún)價(jià)
PHILIPS
22+23+
NA
20917
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢(xún)價(jià)
ST
20+
TO220F-2
38560
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
 詢(xún)價(jià)
PHILIPS
2020+
N/A
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
PHI
2023+
80000
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢(xún)價(jià)
PHILIPS
21+
N/A
90
原裝現(xiàn)貨假一賠十
 詢(xún)價(jià)
ST/意法
23+
TO220F-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
更多BYW29F200供應(yīng)商 更新時(shí)間2025-1-4 15:08:00

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