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M29F200B

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

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M29F200B-120M1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120M1TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120M3R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120M3TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120M6R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120M6TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N1TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N3R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N3TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N6R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-120N6TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

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M29F200B-55M1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55M1TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55M3R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55M3TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55M6R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55M6TR

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

M29F200B-55N1R

2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory

DESCRIPTION TheM29F200isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thed

STMICROELECTRONICSSTMicroelectronics

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詳細(xì)參數(shù)

  • 型號：

    M29F200B

  • 功能描述：

    閃存 RO 511-M29F200BB70M

  • RoHS：

    否

  • 制造商：

    ON Semiconductor

  • 數(shù)據(jù)總線寬度：

    1 bit

  • 存儲類型：

    Flash

  • 存儲容量：

    2 MB

  • 結(jié)構(gòu)：

    256 K x 8

  • 接口類型：

    SPI

  • 電源電壓-最大：

    3.6 V

  • 電源電壓-最小：

    2.3 V

  • 最大工作電流：

    15 mA

  • 工作溫度：

    - 40 C to + 85 C

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
SSOP
93480
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
 詢價
ST
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
ST
23+
SOP
20000
原廠授權(quán)代理分銷現(xiàn)貨只做原裝正邁科技樣品支持現(xiàn)貨
 詢價
24+
3000
公司存貨
 詢價
ST
04+
TSOP48
544
全新原裝進口自己庫存優(yōu)勢
 詢價
ST
2020+
TSOP
18
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
ST
05+
原廠原裝
147
全新原裝 絕對有貨
 詢價
ST
SOP
130
正品原裝--自家現(xiàn)貨-實單可談
 詢價
ST
24+
TSSOP
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
ST
2339+
SOP
5632
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
更多M29F200B供應(yīng)商 更新時間2025-1-6 16:10:00

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