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BSR110ME

Thick Film 2512 Surge Resistors

BITECHBi technologies

瑞谷拜特上海瑞谷拜特軟件技術有限公司

BSS110

P-channelenhancementmodeverticalD-MOStransistor

DESCRIPTION P-channelenhancementmodeverticalD-MOStransistorinaTO-92variantpackage. FEATURES ?Lowthresholdvoltage ?DirectinterfacetoC-MOS,TTL,etc. ?Highspeedswitching ?Nosecondarybreakdown. APPLICATIONS ?IntendedforuseasaLinecurrentinterruptorin telepho

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BSS110

SIPMOSSmall-SignalTransistor(PchannelEnhancementmodeLogicLevel)

SIPMOS?Small-SignalTransistor ?Pchannel ?Enhancementmode ?LogicLevel ?VGS(th)=-0.8...-2.0V

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BSS110

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisdesignedtominimizeon-stateresistance,provideruggedandreliableperformanceandfastswitching

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

BT110S

SurfaceMountGlassPassivatedBridgeRectifiers

HY

HY ELECTRONIC CORP.

BTS110

TEMPFET(NchannelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BTS110

TEMPFET(N-channelEnhancementmodeTemperaturesensorwiththyristorcharacteristic)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BTS110

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BUZ110S

SIPMOSPowerTransistor(NchannelEnhancementmodeAvalanche-rateddv/dtrated)

SIPMOS?PowerTransistor ?Nchannel ?Enhancementmode ?Avalanche-rated ?dv/dtrated ?175°Coperatingtemperature ?alsoinSMDavailable

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BUZ110S

SIPMOS?PowerTransistor

SIPMOSPowerTransistor ProductSummary DrainsourcevoltageVDS55V Drain-Sourceon-stateresistanceRDS(on)0.01? ContinuousdraincurrentID80A Features ?Nchannel ?Enhancementmode ?Avalancherated ?dv/dtrated ?175?Coperatingtemperature

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號：

    BSR110ME

  • 制造商：

    BITECH

  • 制造商全稱：

    Bi technologies

  • 功能描述：

    Thick Film 2512 Surge Resistors

供應商型號品牌批號封裝庫存備注價格
BITECH
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
NEXPERIA/ON/FSC
23+
SOT-23
63000
原裝正品現(xiàn)貨
 詢價
PHILIPS/NXP
2023+環(huán)保現(xiàn)貨
SOT-23
10
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
NXP
2023+
SOT-23
8700
原裝現(xiàn)貨
 詢價
PHILIPS
2023+
SOT-23
50000
原裝現(xiàn)貨
 詢價
NXP
1742+
SOT23
98215
只要網上有絕對有貨!只做原裝正品!
 詢價
BI
2447
SMD
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
PHI
24+
SOT-23
12000
詢價
NXP/ON/FSC
23+
736809
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
PH
15+
SOT-23
6698
詢價
更多BSR110ME供應商 更新時間2025-3-3 17:03:00

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