首頁(yè) >BSO130N03MS G>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??Power-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS??M-SeriesPower-MOSFET | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.ItisintendedforuseinDC-DCconvertersa | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
4.5VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
N-Channel30V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
4VDriveNchMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Switching(30V,13A) ●Features 1)Lowon-resistance. 2)Built-inG-SProtectionDiode. 3)SmallandSurfaceMountPackage(SOP8). ●Application Powerswitching,DC/DCconverter. ●Structure SiliconN-channel MOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
Nch30V13APowerMOSFET | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM |
詳細(xì)參數(shù)
- 型號(hào):
BSO130N03MS G
- 功能描述:
MOSFET OptiMOS 3 M-Series PWR-MOSFET N-CH
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon |
23+ |
DSO-8 |
7750 |
全新原裝優(yōu)勢(shì) |
詢價(jià) | ||
INF |
23+ |
SOP8 |
38233 |
原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON |
24+ |
SOP-8 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
1742+ |
SOP-8 |
98215 |
只要網(wǎng)上有絕對(duì)有貨!只做原裝正品! |
詢價(jià) | ||
INFINEON |
23+ |
SOP-8 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
INFINEON |
23+ |
NA |
1836 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
Infineon |
18+ |
SOP-8 |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
INFINEON |
20+ |
SOP-8 |
32550 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
INFINEO |
2020+ |
SOP-8 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
VBsemi/臺(tái)灣微碧 |
21+ |
SOP-8 |
32012 |
原裝現(xiàn)貨假一賠十 |
詢價(jià) |
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