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BS616LV1623TI-55中文資料ETC數(shù)據(jù)手冊PDF規(guī)格書

BS616LV1623TI-55
廠商型號

BS616LV1623TI-55

功能描述

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

文件大小

256.89 Kbytes

頁面數(shù)量

10

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更新時(shí)間

2025-1-18 19:00:00

BS616LV1623TI-55規(guī)格書詳情

[BSI]

DESCRIPTION

The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage.

FEATURES

? Vcc operation voltage : 2.7 ~ 3.6V

? Very low power consumption :

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.) CMOS standby current

? High speed access time :

-55 55ns

-70 70ns

? Automatic power down when chip is deselected

? Three state outputs and TTL compatible

? Fully static operation

? Data retention supply voltage as low as 1.5V

? Easy expansion with CE1, CE2 and OE options

? I/O Configuration x8/x16 selectable by CIO, LB and UB pin

產(chǎn)品屬性

  • 型號:

    BS616LV1623TI-55

  • 功能描述:

    Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

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