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BS616LV1623TC-55中文資料ETC數(shù)據(jù)手冊(cè)PDF規(guī)格書

BS616LV1623TC-55
廠商型號(hào)

BS616LV1623TC-55

功能描述

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

文件大小

256.89 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

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企業(yè)簡(jiǎn)稱

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中文名稱

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原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-18 23:00:00

BS616LV1623TC-55規(guī)格書詳情

[BSI]

DESCRIPTION

The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage.

FEATURES

? Vcc operation voltage : 2.7 ~ 3.6V

? Very low power consumption :

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.) CMOS standby current

? High speed access time :

-55 55ns

-70 70ns

? Automatic power down when chip is deselected

? Three state outputs and TTL compatible

? Fully static operation

? Data retention supply voltage as low as 1.5V

? Easy expansion with CE1, CE2 and OE options

? I/O Configuration x8/x16 selectable by CIO, LB and UB pin

產(chǎn)品屬性

  • 型號(hào):

    BS616LV1623TC-55

  • 功能描述:

    Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
SAMSUNG/三星
23+
NA/
3411
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0630+
927
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21+
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26
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68900
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06+
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26
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17+
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9988
只做原裝進(jìn)口,自己庫(kù)存
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SAMSANG
19+
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256800
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BSI
24+
TSOP48
5000
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BSI
21+
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12588
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23+
BGA
6500
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