BLS6G2731S-120分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻規(guī)格書(shū)PDF中文資料

BLS6G2731S-120屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由安譜隆制造生產(chǎn)的BLS6G2731S-120晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個(gè)端子的半導(dǎo)體器件，器件中電流受電場(chǎng)控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號(hào)或功率的晶體管類(lèi)型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

General description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features

?Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 ?s with ? of 10 :

?Output power = 120 W

?Power gain = 13.5 dB

?Efficiency = 48

?Easy power control

?Integrated ESD protection

?High flexibility with respect to pulse formats

?Excellent ruggedness

?High efficiency

?Excellent thermal stability

?Designed for broadband operation (2.7 GHz to 3.1 GHz)

?Internally matched for ease of use

?Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

? S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency

range