首頁 >BGY110G>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TECHNICALSPECIFICATIONSOFSCHOTTKYSINGLE-PHASESURFACEMOUNTBRIDGERECTIFIERVOLTAGERANGE | DCCOM Dc Components | DCCOM | ||
RFCO-AXIALCONNECTORS | HIROSEHirose Electric Company 廣瀨日本廣瀨電機株式會社 | HIROSE | ||
12mmAnalogLowPressureSensor | BournsBourns Electronic Solutions 伯恩斯 | Bourns | ||
ULTRA-FASTRECOVERY4to6AMPERESSINGLE-PHASE,FULL-WAVEBRIDGESHEATSINKCHASSISPCBOARDMOUNTING | edi Electronic devices inc. | edi | ||
N-channelenhancementmodeverticalD-MOStransistor DESCRIPTION N-channelenhancementmodeverticalD-MOStransistorinaminiatureSOT223envelopeanddesignedforuseintelephoneringercircuitsandforapplicationinrelay,high-speedandlinetransformerdrivers. FEATURES ?DirectinterfacetoC-MOS,TTL,etc. ?High-speedswitching ?No | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-Channel100-V(D-S)MOSFET FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFETs ?175°CMaximumJunctionTemperature ?ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor 1.Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS?1technology. Productavailability: BSP110inSOT223. 2.Features nTrenchMOS?technology nVeryfastswitching nLogiclevelcompatible nSurfacemountpackage. 3.Applications nRela | NEXPERIANexperia B.V. All rights reserved 安世安世半導體(中國)有限公司 | NEXPERIA | ||
ThickFilm2512SurgeResistors | BITECHBi technologies 瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司 | BITECH | ||
ThickFilm2512SurgeResistors | BITECHBi technologies 瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司 | BITECH | ||
ThickFilm2512SurgeResistors | BITECHBi technologies 瑞谷拜特上海瑞谷拜特軟件技術(shù)有限公司 | BITECH |
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