General description

10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz.

Features and benefits

■ High efficiency

■ Excellent ruggedness

■ Designed for broadband operation

■ Excellent thermal stability

■ High power gain

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

■ CDMA

■ W-CDMA

■ GSM EDGE

■ MC-GSM

■ LTE

■ WiMAX

BGA2022屬于RF/IF，射頻/中頻和 RFID > 射頻混頻器。恩智浦半導(dǎo)體公司制造生產(chǎn)的BGA2022射頻混頻器射頻混頻器又稱混頻器，這些器件具有三個(gè)端口，用于改變兩個(gè)輸入信號(hào)的頻率。射頻混頻器是一些無(wú)源或有源器件，可用于對(duì)信號(hào)進(jìn)行上下變頻。特征包括射頻類型、頻率、混頻器數(shù)、增益、噪聲系數(shù)、輔助屬性、電流和電壓。頻率范圍為 0 至 90 GHz，混頻器數(shù)為 1、2、3 或 4。