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AOZ1328DI-02

Marking：BG02；Package：DFN3x3-12L；ECPower? 20V 18mΩ Protection Switch with True Reverse Current Blocking

GeneralDescription TheAOZ1328DIpowerswitchisintendedfor applicationsthatrequirecircuitprotections.Theinput operatingvoltagerangesbetween3.4Vand22V,making itidealforUSBType-Cpowerdeliveryapplications.The VINterminalisratedas28VAbsoluteMaximum.The AOZ1328DI

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

NTBG022N120M3S

Marking：BG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG025N065SC1

Marking：BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=19m@VGS=18VTyp.RDS(on)=25m@VGS=15V ?UltraLowGateCharge(QG(tot)=164nC) ?LowOutputCapacitance(Coss=278pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) ?SolarInv

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NTBG028N170M1

Marking：BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L

Features ?Typ.RDS(on)=28m ?UltraLowGateCharge(typ.QG(tot)=222nC) ?LowEffectiveOutputCapacitance(typ.Coss=200pF) ?100AvalancheTested ?RoHSCompliant TypicalApplications ?UPS ?DC/DCConverter ?BoostConverter

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG022N120M3S

Marking：BG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=148nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=148pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesareRoHSCompliant TypicalApplications ?AutomotiveOnBoardC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NVBG022N120M3S

Marking：BG022N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m@VGS=18V ?UltraLowGateCharge(QG(tot)=148nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=148pF) ?100AvalancheTested ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesareRoHSCompliant TypicalApplications ?AutomotiveOnBoardC

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

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2410+
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9000
十年芯路!只做原裝!一直起賣!
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306
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2500
優(yōu)勢庫存,原裝正品
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10
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2447
SMD
100500
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1922+
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6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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更多BG02供應(yīng)商 更新時間2025-3-30 15:00:00

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