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BFY183

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183

HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor)

Features ?HiRelDiscreteandMicrowaveSemiconductor ?Forlownoise,highgainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA ?Hermeticallysealedmicrowavepackage ?fT=8GHz,F=2.3dBat2GHz ?eesaqualified ?ESA/SCCDetailSpec.No.:5611/006

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BFY183

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183ES

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183H

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183P

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183S

HiRel NPN Silicon RF Transistor

HiRelNPNSiliconRFTransistor ●HiRelDiscreteandMicrowaveSemiconductor ●Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom2mAto30mA. ●Hermeticallysealedmicrowavepackage ●fT=8GHzF=2.3dBat2GHz ●eesaqualified ●ESA/SCCDetailSpec.No.:5611/006

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFY183_11

HiRel NPN Silicon RF Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BH183

BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL

ADAM-TECHAdam Technologies, Inc.

亞當(dāng)科技亞當(dāng)科技股份有限公司

BLF183XR

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BLF183XRS

PowerLDMOStransistor

Generaldescription A350WextremelyruggedLDMOSpowertransistorforbroadcastandindustrial applicationsintheHFto600MHzband. Featuresandbenefits ?Easypowercontrol ?IntegratedESDprotection ?Excellentruggedness ?Highefficiency ?Excellentthermalstability ?Designed

AmpleonAmpleon USA Inc.

安譜隆

BMP183

Digitalpressuresensor

boschBosch Sensortec GmbH

博世博世半導(dǎo)體

BTP-183XXCQ-XX-XX

BriLux1WLightSource

DBLECTRODB Lectro Inc

迪貝電子

CTCVCF-183J

PowerCoatedInductors-Axial

CT

Central Technologies

CTCVCF-183K

PowerCoatedInductors-Axial

CT

Central Technologies

CTCVCF-183M

PowerCoatedInductors-Axial

CT

Central Technologies

DAN-183

MIGRATINGFROMTHEXR17D15XTOTHEXR17V25X

EXARExar Corporation

艾科嘉艾科嘉(杭州)信息技術(shù)有限公司

DBM-183

HighLevelSubminiatureFlatpackDoubleBalancedMixer10MHzto4000MHz

RFMD

RF Micro Devices

DG183

High-SpeedDriversandDualDPSTJFETSwitches

DESCRIPTION TheDG183/184/185areprecisiondualdouble-pole,single-throw(DPST)analogswitchesdesignedtoprovideaccurateswitchingofvideoandaudiosignals.Thisseriesisideallysuitedforapplicationsrequiringaconstanton-resistanceovertheentireanalogrange. FEATURESf ?Consta

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

DG183

High-SpeedDriverswithDualDPSTJFETSwitches

Description TheDG183/184/185areprecisiondualdouble-pole,single-throw(DPST)analogswitchesdesignedtoprovideaccurateswitchingofvideoandaudiosignals.Thisseriesisideallysuitedforapplicationsrequiringaconstanton-resistanceovertheentireanalogrange. Features ?Constan

Temic

TEMIC Semiconductors

詳細(xì)參數(shù)

  • 型號(hào):

    BFY183

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    HiRel NPN Silicon RF Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
INFINEON
22+
16+
8000
終端可免費(fèi)供樣,支持BOM配單
詢價(jià)
INFINEON
23+
--
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價(jià)
INFINEON
23+
CG-UX-4
8000
只做原裝現(xiàn)貨
詢價(jià)
INFINEON
23+
CG-UX-4
7000
詢價(jià)
NO
24+
12
詢價(jià)
MOT/ST/PH
2339+
CAN3
13523
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
詢價(jià)
MOT/PHI
24+
CAN3
19500
原裝現(xiàn)貨假一罰十
詢價(jià)
MOT/PHI
專業(yè)鐵帽
CAN3
67500
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票
詢價(jià)
NO
2023+
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
更多BFY183供應(yīng)商 更新時(shí)間2025-1-18 9:02:00