BFU725F

NPN wideband silicon germanium RF transistor

Generaldescription NPNsilicongermaniummicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Features ■Lownoisehighgainmicrowavetransistor ■Noisefigure(NF)=0.7dBat5.8GHz ■Highmaximumstablegain27dBat1.8GHz ■11

BFU725F

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFU725F

NPN wideband silicon germanium RF transistor

BFU725F/N1

NPN wideband silicon germanium RF transistor

Generaldescription NPNsilicongermaniummicrowavetransistorforhighspeed,lownoiseapplicationsinaplastic,4-pindual-emitterSOT343Fpackage. Features ■Lownoisehighgainmicrowavetransistor ■Noisefigure(NF)=0.7dBat5.8GHz ■Highmaximumstablegain27dBat1.8GHz ■11

BFU725F-N1

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFU725F_11

NPN wideband silicon germanium RF transistor

BFU725F_N1_15

NPN wideband silicon germanium RF transistor

BFU725F-N1

NPN wideband silicon germanium RF transistor

BFU725F-N1

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package

BFU725FN1-115

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package

BFU725F,115

包裝：卷帶（TR） 封裝/外殼：SOT-343F 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 2.8V 70GHZ 4DFP

BFU725F/N1,115

包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 封裝/外殼：SOT-343 反向插針 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極（BJT）- 射頻 描述：RF TRANS NPN 2.8V 55GHZ 4SO