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BD650

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD650

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD650

NPN SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD650

PNP SILICON DARLINGTON TRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD650

SILICON DARLINGTON POWER TRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD650

PNP SILICON POWER DARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD650

isc Silicon PNP Darlington Power Transistor

SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain:hFE=750(Min)@IC=-3A ·LowSaturationVoltage ·ComplementtoTypeBD649 APPLICATIONS ·DesignedforuseascomplementaryAFpush-pull

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD650

Silicon PNP Power Transistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD650

SILICON DARLINGTON POWER TRANSISTORS

COMSET

Comset Semiconductor

BD650

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

晶體管資料

  • 型號:

    BD650

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產廠家:

  • 制作材料:

    Si-P+Darl+Di

  • 性質:

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    100V

  • 最大電流允許值:

    8A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數:

    3

  • 可代換的型號:

    BD702,BD902,BDW74C,BDX34C,BDX54C,FC50B,

  • 最大耗散功率:

    62.5W

  • 放大倍數:

  • 圖片代號:

    B-10

  • vtest:

    100

  • htest:

    999900

  • atest:

    8

  • wtest:

    62.5

詳細參數

  • 型號:

    BD650

  • 功能描述:

    達林頓晶體管 62.5W PNP Silicon

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶體管極性:

    NPN 集電極—發(fā)射極最大電壓

  • VCEO:

    50 V 發(fā)射極 - 基極電壓

  • VEBO:

    集電極—基極電壓

  • 最大直流電集電極電流:

    0.5 A

  • 最大工作溫度:

    + 150 C

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    SOIC-18

  • 封裝:

    Reel

供應商型號品牌批號封裝庫存備注價格
ST/進口原
17+
TO-220
6200
詢價
BOURNS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
PHI
1738+
TO-220
8529
科恒偉業(yè)!只做原裝正品,假一賠十!
詢價
ON/ST
19+
TO-126
65974
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
NXP
23+
TO-220
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
詢價
POWER
23+
TO-220
25000
專做原裝正品,假一罰百!
詢價
ST
21+
TO-220
12588
原裝正品,自己庫存 假一罰十
詢價
P
23+
TO-220
34
詢價
ST
20+
TO-220
38560
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
21+
TO-220
7789
原裝現貨假一賠十
詢價
更多BD650供應商 更新時間2025-3-30 16:00:00