首頁 >BD619>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

BD619

PNP SILICON EPIBASE TRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD619

NPN SILICON EPIBASE TRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BFP619

NPNTransistor

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

BGA619

TheBGA619Silicon-GermaniumHighIP3LowNoiseAmplifierinPCSReceiverApplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

CTSPWF-619-D

PowerTransformers-StandardEDual115V

CT

Central Technologies

CTSPWF-619-S

PowerTransformers-StandardESingle115V

CT

Central Technologies

DC-619

3.0WATTSINGLE&DUALOUTPUTDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

EDS-619

163G-portcompactmodularmanagedEthernetswitches

moxaMOXA

臺灣摩莎摩莎科技(上海)有限公司

EDS-619-T

163G-portcompactmodularmanagedEthernetswitches

moxaMOXA

臺灣摩莎摩莎科技(上海)有限公司

FCX619

NPNSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *6APEAKPULSECURRENT *EXCELLENThFECHARACTERISTICSUPTO6Amps *EXTREMELYLOWSATURATIONVOLTAGEe.g.13mVtyp. *EXTREMELYLOWEQUIVALENTON-RESISTANCE; *RCE(sat)87m?at2.75A COMPLIMENTARYTYPE-FCX720 PARTMARKINGDETAIL-619

Zetex

Zetex Semiconductors

FCX619

SOT89NPNSILICONPOWER(SWITCHING)TRANSISTOR

Zetex

Zetex Semiconductors

FCX619

NPNSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●6Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto6amps. ●ExtremelylowsaturationvoltageE.g.13mvTyp. ●Extremelylowequivalenton-resistance. RCE(sat)87mΩat2.75A.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FCX619

SOT89NPNSILICONPOWER

Features ?BVCEO>50V ?IC=3AHighContinuousCollectorCurrent ?ICMupto6APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FCX619TA

50VNPNLOWSATURATIONPOWERTRANSISTORINSOT89

DIODES

Diodes Incorporated

FMMT619

SOT23NPNSILICONPOWER

Features ?BVCEO>15V ?IC=3AhighContinuousCollectorCurrent ?ICM=12APeakPulseCurrent ?RCE(sat)=50m?foralowequivalentOn-Resistance ?625mWPowerdissipation ?hFEspecifiedupto12Aforhighcurrentgainholdup ?ComplementaryPNPType:FMMT717 ?TotallyLead-Free&am

DIODES

Diodes Incorporated

FMMT619

NPNSILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT3A *12APeakPulseCurrent *ExcellentHFECharacteristicsUpTo12A(pulsed) *ExtremelyLowSaturationVoltageE.g.8mVTyp. *ExtremelyLowEquivalentOnResistance;RCE(sat)

Zetex

Zetex Semiconductors

FMMT619

NPNTransistors

■Features ●CollectorCurrentCapabilityIC=2A ●CollectorEmitterVoltageVCEO=50V ●ComplementarytoFMMT720

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

FMMT619QTA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

Features ?BVCEO>50V ?IC=2AContinuousCollectorCurrent ?625mWpowerdissipation ?LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

FMMT619QTA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

DIODES

Diodes Incorporated

FMMT619TA

50VNPNSILICONLOWSATURATIONTRANSISTORINSOT23

DIODES

Diodes Incorporated

晶體管資料

  • 型號:

    BD619

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-NPN

  • 性質:

    低頻或音頻放大 (LF)_功率放大 (L)

  • 封裝形式:

    直插封裝

  • 極限工作電壓:

    80V

  • 最大電流允許值:

    4A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

    3

  • 可代換的型號:

    BD189,BD199,3DD60C,

  • 最大耗散功率:

    15W

  • 放大倍數(shù):

  • 圖片代號:

    B-84

  • vtest:

    80

  • htest:

    999900

  • atest:

    4

  • wtest:

    15

詳細參數(shù)

  • 型號:

    BD619

  • 制造商:

    INFINEON

  • 制造商全稱:

    Infineon Technologies AG

  • 功能描述:

    NPN SILICON EPIBASE TRANSISTORS

供應商型號品牌批號封裝庫存備注價格
23+
20000
正品原裝貨價格低
詢價
PANJIT/強茂
17+PBF
TO-252
12000
原裝正品現(xiàn)貨,可開發(fā)票,假一賠十
詢價
PANJIT
23+
TO-252
10000
公司只做原裝正品
詢價
PANJIT
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
PANJIT
2022
TO-252
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
PANJIT
TO-252
22+
6000
十年配單,只做原裝
詢價
PANJIT
21+
TO-252
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
PANJIT
TO-252
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
PANJIT/強茂
23+
TO-252
12000
原廠授權代理,海外優(yōu)勢訂貨渠道??商峁┐罅繋齑?詳
詢價
PANJIT
23+
NA/
12250
原裝現(xiàn)貨,當天可交貨,原型號開票
詢價
更多BD619供應商 更新時間2025-1-9 10:30:00