首頁(yè) >BCP5316QTA>規(guī)格書列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
BCP5316QTA | PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 Features ?BVCEO>-45V,-60V&-80V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | |
BCP5316QTA | Marking:BCP5316;Package:SOT223;80V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features BVCEO>-80V IC=-1AHighContinuousCollectorCurrent ICM=-2APeakPulseCurrent 2WPowerDissipation LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | |
BCP5316QTA | Package:TO-261-4,TO-261AA;包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:PWR MID PERF TRANSISTOR SOT223 T | PAM Diodes Incorporated | PAM | |
PNPSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features ?BVCEO>-45V,-60V&-80V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT223 Features ?BVCEO>-45V,-60V&-80V ?IC=-1AHighContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?2WPowerDissipation ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTOR SOT89PNPSILICONPLANARMEDIUMPOWERTRANSISTOR COMPLIMENTARYTYPE–BCX5616 PARTMARKINGDETAIL–AL | Zetex Zetex Semiconductors | Zetex | ||
80VPNPMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEO>-80V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
80VPNPMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEO>-80V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
80VPNPMEDIUMPOWERTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofautomotiveapplications. Features ?BVCEO>-80V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT89 Features ?BVCEO>-45V,-60V&-80V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(SAT) | DIODES Diodes Incorporated | DIODES | ||
NPNSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT89 Features ?BVCEO>45V,60V&80V ?Ic=1AContinuousCollectorCurrent ?ICM=2APeakPulseCurrent ?LowSaturationVoltageVCE(sat) | DIODES Diodes Incorporated | DIODES | ||
PNPSILICONPLANARMEDIUMPOWERTRANSISTORSINSOT89 Features ?BVCEO>-45V,-60V&-80V ?IC=-1AContinuousCollectorCurrent ?ICM=-2APeakPulseCurrent ?LowSaturationVoltageVCE(SAT) | DIODES Diodes Incorporated | DIODES | ||
FreeTimeDelaySettingCMOSVoltageDetector(Reset)IC GeneralDescription ROHM'sBD52xx-2MandBD53xx-2Mseriesarehighly accurate,lowcurrentconsumptionVoltageDetector ICswithacapacitorcontrolledtimedelay.Thelineup includesN-channelopendrainoutput(BD52xx-2M) andCMOSoutput(BD53xx-2M)sothattheuserscan selectdependingo | ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán) | ROHM | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA | ||
512MbitsDDR3SDRAM | ELPIDAElpida Memory 美光科技美光科技股份有限公司 | ELPIDA |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
BCP5316QTA
- 制造商:
Diodes Incorporated
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 系列:
Automotive, AEC-Q101
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 晶體管類型:
PNP
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
500mV @ 50mA,500mA
- 電流 - 集電極截止(最大值):
100nA(ICBO)
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
100 @ 150mA,2V
- 頻率 - 躍遷:
150MHz
- 工作溫度:
-55°C ~ 150°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-261-4,TO-261AA
- 供應(yīng)商器件封裝:
SOT-223-3
- 描述:
PWR MID PERF TRANSISTOR SOT223 T
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
DIODES/美臺(tái) |
20+ |
SOT-223 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) | ||
DIODES(美臺(tái)) |
23+ |
SOT-223-4 |
8498 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。 |
詢價(jià) | ||
DIODES/美臺(tái) |
24+ |
SOT223 |
7906200 |
一站配齊,原盒原包現(xiàn)貨原廠一手渠道聯(lián)系 |
詢價(jià) | ||
DIODES/美臺(tái) |
22+ |
SOT223 |
90000 |
正規(guī)代理渠道假一賠十 |
詢價(jià) | ||
DIODES/美臺(tái) |
1936+ |
SOT223 |
6852 |
只做原裝正品現(xiàn)貨或訂貨!假一賠十! |
詢價(jià) | ||
DIODES/美臺(tái) |
2021+ |
SOT223 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
DIODES/美臺(tái) |
22+ |
SOT-223 |
9600 |
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單! |
詢價(jià) | ||
Diodes(美臺(tái)) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
NA |
6000 |
原裝正品假一罰百!可開(kāi)增票! |
詢價(jià) | ||
DIODES/美臺(tái) |
23+ |
SOT-223 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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