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BAW101S-Q

Marking：K2；Package：TSSOP6；High voltage double diode

1.Generaldescription TheBAW101Sisahigh-speedswitchingdiodearraywithtwoseparatedice,fabricatedinplanar technologyandencapsulatedinasmallSOT363Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits ?SmallplasticSMDpackage ?Highswitchingspeed:max.

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

BAW101V

HIGHVOLTAGEDUALSWITCHINGDIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BB-101

BaseboardforTMCM-101

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB101C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101CAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101MAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BBP-101

BandpassFilter

MINI

Mini-Circuits

供應商型號品牌批號封裝庫存備注價格
Nexperia USA Inc.
24+
6-TSSOP SC-88 SOT-363
9350
獨立分銷商 公司只做原裝 誠心經營 免費試樣正品保證
 詢價
NXP/恩智浦
23+
SOT-363
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NXP/恩智浦
2022
SOT-363
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
PHILIPS/飛利浦
23+
NA/
2250
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
PHILIPS/飛利浦
04+
SOT143
1000
進口原裝現(xiàn)貨假一賠萬力挺實單
 詢價
Diodes
22+
SOT563
9000
原廠渠道,現(xiàn)貨配單
 詢價
Diodes
21+
SOT563
13880
公司只售原裝,支持實單
 詢價
DIODES
22+23+
SOT563
46347
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
DIODES/美臺
22+
SOT563
90000
正規(guī)代理渠道假一賠十
 詢價
DIODES/美臺
2021+
SOT563
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多BAW101S-Q供應商 更新時間2025-1-17 14:08:00

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