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BAW101V

HIGH VOLTAGE DUAL SWITCHING DIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BAW101V-7

HIGH VOLTAGE DUAL SWITCHING DIODE

Features ?FastSwitchingSpeed:Maximumof50ns ?HighReverseBreakdownVoltage:325VforSingleDiodeor 650VforSeriesConnection ?TwoElectricallyIsolatedElementsinaSingleCompactPackage ?LowLeakageCurrent:Maximumof50nAwhenVR=5Vor Maximumof150nAwhenVR=250V

DIODES

Diodes Incorporated

BAW101V_15

HIGH VOLTAGE DUAL SWITCHING DIODE

DIODES

Diodes Incorporated

BAW101V-7

Package：SOT-563，SOT-666；包裝：卷帶（TR）剪切帶（CT） 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 陣列 描述：DIODE ARRAY GP 325V 250MA SOT563

PAM

Diodes Incorporated

BB-101

BaseboardforTMCM-101

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BB101C

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101C

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101CAU-TL-E

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;CMPAK-4(SOT-

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB101M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB101M

BuiltinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=2.0dBtyp.atf=900MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    BAW101V

  • 制造商：

    DIODES

  • 制造商全稱：

    Diodes Incorporated

  • 功能描述：

    HIGH VOLTAGE DUAL SWITCHING DIODE

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
DIODES
22+23+
SOT563
46347
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
DIODES/美臺(tái)
22+
SOT563
90000
正規(guī)代理渠道假一賠十
 詢價(jià)
DIODES/美臺(tái)
2447
SOT563
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
DIODES
21+
SOT563
8049
原裝現(xiàn)貨假一賠十
 詢價(jià)
DIODES
1809+
SOT-563
6675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
DIODES/美臺(tái)
23+
SOT563
6000
原裝正品假一罰百!可開(kāi)增票!
 詢價(jià)
DIODES/美臺(tái)
23+
SOT563
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
DIODES
22+
NA
3000
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
DIODES/美臺(tái)
24+
NA
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
 詢價(jià)
Diodes
22+
SOT563
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
更多BAW101V供應(yīng)商 更新時(shí)間2025-3-18 16:49:00

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