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DAN217

Marking:BA1;Package:SOT-23;Plastic-Encapsulate Diodes

FEATURES Smallsurfacemountingtype Twodiodeelementsareconnectedinseries

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

IGB110S101

Marking:BA1;Package:PG-VSON-4;CoolGaNTM Transistor 100 V G3

Features ?Enhancementmodepowertransistor-normallyOFFswitch ?Noreverserecoverycharge ?Reverseconductioncapability ?Lowgatecharge,lowoutputcharge ?QualifiedaccordingtoJEDECfortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IGB110S10S1

Marking:BA1;Package:PG-TSON-4;CoolGaNTM Transistor 100 V G3

Features ?Enhancementmodepowertransistor-normallyOFFswitch ?Noreverserecoverycharge ?Reverseconductioncapability ?Lowgatecharge,lowoutputcharge ?QualifiedaccordingtoJEDECfortargetapplications

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

TMAG5253BA1IQDMRR

Marking:BA1;Package:X2SON;TMAG5253 Low-Power Linear Hall Effect Sensor With EN Pin in Ultra-Small Package

1Features ?Industry-leadinglowpower: –Supplyvoltage,VCC:1.65V–3.6V –Shutdowncurrent:

TI1Texas Instruments

德州儀器

DAN217

Marking:BA1;Package:SOT-23;Surface mount switching diode

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

DAN217

Marking:BA1;Package:SOT-23;Surface Mount Switching Diode

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

魯光電子深圳市魯光電子科技有限公司

BA15BC0WT

Marking:BA15BC0W;Package:TO220FP-5;1.0A Low-Dropout Voltage Regulator with Shut down Switch

BA33BCO->CorrectParnumber:BA33BC0 TheBAxxBC0arelow-saturationregulatorswithanoutputcurrentof1.0Aandanoutputvoltageaccuracyof±2.Abroadoutputvoltagerangeisoffered,from1.5Vto10V,andbuilt-inovercurrentprotectionandthermalshutdown(TSD)circuitspreventdamag

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BA15N26B-GB-B

Marking:BA15N26B;Package:TO-3PL;Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS ?Highfidelityaudioamplifierandotherlinearapplications FEATURES ?Highcollectorvoltage:VCEO=260V(min) ?ComplementaryNPN-PNP ?ExceptionalSafeOperatingArea ?RoHSDevices

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BA15N26B-GD-B

Marking:BA15N26B;Package:TO-3PB;Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS ?Highfidelityaudioamplifierandotherlinearapplications FEATURES ?Highcollectorvoltage:VCEO=260V(min) ?ComplementaryNPN-PNP ?ExceptionalSafeOperatingArea ?RoHSDevices

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

BA15P26B-GB-B

Marking:BA15P26B;Package:TO-3PL;Complementary NPN-PNP Power Bipolar Transistor R

APPLICATIONS ?Highfidelityaudioamplifierandotherlinearapplications FEATURES ?Highcollectorvoltage:VCEO=260V(min) ?ComplementaryNPN-PNP ?ExceptionalSafeOperatingArea ?RoHSDevices

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

晶體管資料

  • 型號(hào):

    BA1A3Q...L4Z

  • 別名:

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家:

  • 制作材料:

    Si-N+R

  • 性質(zhì):

    開關(guān)管 (S)

  • 封裝形式:

  • 極限工作電壓:

    60V

  • 最大電流允許值:

    0.1A

  • 最大工作頻率:

    <1MHZ或未知

  • 引腳數(shù):

  • 可代換的型號(hào):

  • 最大耗散功率:

    0.25W

  • 放大倍數(shù):

  • 圖片代號(hào):

    NO

  • vtest:

    60

  • htest:

    999900

  • atest:

    0.1

  • wtest:

    0.25

詳細(xì)參數(shù)

  • 型號(hào):

    BA1

  • 制造商:

    MISCELLANEOUS

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
樂(lè)韻瑞
23+
SMD
918000
明嘉萊只做原裝正品現(xiàn)貨
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MIC
19+
DO-41
65523
原廠代理渠道,每一顆芯片都可追溯原廠;
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NEC
24+
TO-92S
5000
全現(xiàn)原裝公司現(xiàn)貨
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ROHM
13+
SOP8
4462
原裝分銷
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ROHM/羅姆
專業(yè)鐵帽
SOT
109
原裝鐵帽專營(yíng),代理渠道量大可訂貨
詢價(jià)
24+
DIP16P
6980
原裝現(xiàn)貨,可開13%稅票
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ROHM
24+
SOIC-8
25000
一級(jí)專營(yíng)品牌全新原裝熱賣
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ROHM
03+
SOP18P
6000
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
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ROHM
10+
SOP-8
6000
絕對(duì)原裝自己現(xiàn)貨
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FSC/ON
23+
原包裝原封 □□
50040
原裝進(jìn)口特價(jià)供應(yīng) QQ 1304306553 更多詳細(xì)咨詢 庫(kù)存
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更多BA1供應(yīng)商 更新時(shí)間2025-1-27 17:02:00