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BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ?DesignedforComplementaryUsewithBD645,BD647,BD649ANDBD651 ?62.5Wat25°CCaseTemperture ?8AContinuousCollectorCurrent ?MinimumhFEof750at3V,3A

TRSYS

Transys Electronics

BD650

PNPSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD650

NPNSILICONDARLINGTONTRANSISTORS

NPNSILICONDARLINGTONTRANSISTORS

SIEMENSSiemens Semiconductor Group

西門子德國西門子股份公司

BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

POINN

Power Innovations Ltd

BD650

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS PNPepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe.Theyareintendedforoutputstagesinaudioequipment,generalamplifiers,andanalogueswitchingapplication. NPNcomplementsareBD643,BD645,BD647

COMSET

Comset Semiconductor

BD650

PNPSILICONPOWERDARLINGTONS

PNPSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewithBD645,BD647,BD649andBD651 ●62.5Wat25°CCaseTemperature ●8AContinuousCollectorCurrent ●MinimumhFEof750at3V,3A

BournsBourns Electronic Solutions

伯恩斯

BD650

iscSiliconPNPDarlingtonPowerTransistor

SiliconPNPDarlingtonPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=-100V(Min) ·HighDCCurrentGain:hFE=750(Min)@IC=-3A ·LowSaturationVoltage ·ComplementtoTypeBD649 APPLICATIONS ·DesignedforuseascomplementaryAFpush-pull

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BD650

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·ComplementtotypeBD645/647/649/651 ·DARLINGTON APPLICATIONS ·Foruseinoutputstagesinaudioequipment,generalamplifier,andanalogueswitchingapplications

SAVANTIC

Savantic, Inc.

BD650

SILICONDARLINGTONPOWERTRANSISTORS

COMSET

Comset Semiconductor

BD650

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

BD650

SiliconPNPDarlingtonPowerTransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

BD650CS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

Voltage40~200VCurrent6A Features ●PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-O. ●Forsurfacemountedapplicationsinordertooptimizeboardspace ●Lowpowerloss,Highefficiency ●Highsurgecapacity ●Hightemperaturesolderingguaranteed:260oC

PANJITPan Jit International Inc.

強茂股份有限公司

BD650CS

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650CT

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-O ?Forsurfacemountedapplications ?Lowprofilepackage ?Built-instrainrelief ?Lowpowerloss,Highefficiency ?Highsurgecapacity ?F

PANJITPan Jit International Inc.

強茂股份有限公司

BD650CT

6.0ASCHOTTKYBARRIERDIODE

ZSELECZibo Seno Electronic Engineering Co.,Ltd

淄博圣諾電子淄博圣諾電子工程有限公司

BD650F

iscSiliconPNPDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

BFP650

NPNSiliconGermaniumRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

NPNSiliconGermaniumRFTransistor

NPNSiliconGermaniumRFTransistor Preliminarydata ?Forhighpoweramplifiers ?Idealforlowphasenoiseoscilators ?Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz ?Goldmetallizationforhighreliability ?70GHzfT-SiliconGermaniumtechnology.

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearityLowNoiseSiGe:CNPNRFTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BFP650

HighLinearitySiliconGermaniumBipolarRFTransistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    AWM650RX

  • 制造商：

    LPRS

  • 功能描述：

    MODULE AUDIO/VIDEO RECEIVER

  • 功能描述：

    RF MOD, AUDIO/VIDEO RECEIVER, FM

  • 功能描述：

    RF MOD, AUDIO/VIDEO RECEIVER, FM; Modulation

  • Type：

    FM; Frequency

  • Min：

    2.4GHz; Frequency

  • Max：

    2.483GHz; Sensitivity

  • dBm：

    -10dBm; Supply Voltage

  • Min：

    4.9V; Supply Voltage

  • Max：

    5.1V; Supply

  • Current：

    160mA;

  • SVHC：

    No SVHC(19-Dec-2012); ;RoHS

  • Compliant：

    Yes

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AIRWAVE
2015+
DIP
28989
專業(yè)代理原裝現貨,特價熱賣!
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LUCENT
23+
PLCC68
7000
絕對全新原裝!100%保質量特價!請放心訂購!
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AMPHENOL/安費諾
2420+
/
391805
一級代理,原裝正品!
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AmphenolSINESystems
24+
DIP
17900
汽車連接器WEDGELOCKRECPT
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Amphenol Industrial
2021+
楔形鎖
285000
專供連接器,軍工合格供應商!
 詢價
AMPHENOL/安費諾
2021+
C0603
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
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AMPHENOL
20+
連接器
9049
就找我吧!--邀您體驗愉快問購元件!
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Amphenol
22+
NA
2320
加我QQ或微信咨詢更多詳細信息,
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安費諾
2122+
NA
15688
全新原裝正品現貨,優(yōu)勢渠道可含稅,假一賠十
 詢價
Amphenol
2022+
5000
只做原裝，可提供樣品
 詢價
更多AWM650RX供應商 更新時間2025-1-2 17:47:00

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