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ATP103-TL-H

P-Channel Power MOSFET

P-ChannelPowerMOSFET –30V,–55A,13mΩ,SingleATPAK Features ?LowON-resistance ?Slimpackage ?Halogenfreecompliance ?Largecurrent ?4.5Vdrive ?Protectiondiodein

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

ATP103-TL-H

General-Purpose Switching Device Applications

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

B103

1WATTDC-DCCONVERTERS

INTRONICS

Intronics Power, Inc.

BA103

BA/BCSeries:1.5-6.0WattsSingleandDualOutputs

FEATURES ?InputπFilter ?FullyRegulatedOutputs ?IndustryStandardPinouts ?5,12,24,28,and48VDCInputs ?RippleandNoiseLessThan50mVpp ?Input/OutputIsolation

ETCList of Unclassifed Manufacturers

未分類制造商

BAV103

SiliconEpitaxialPlanarDiodes

Features ?SiliconEpitaxialPlanarDiodes ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Generalpurposes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV103

Generalpurposediodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES ?SmallhermeticallysealedglassSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuou

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BAV103

HighVoltage,GeneralPurposeDiode

Description AgeneralpurposediodethatcoupleshighforwardconductancefastswichingspeedandhighblockingvoltagesinaglassleadlessLL-34surfacemountpackage.Placementoftheexpansiongaphasnorelationshiptothelocationofthecathodeterminalwhichisindicatedbythefirstcolo

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BAV103

SmallSignalDiodes

FEATURES ?SiliconEpitaxialPlanarDiodes ?Forgeneralpurpose ?Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

BAV103

SURFACEMOUNTSWITCHINGDIODE

Features ●Case:MiniMELF,Glass ●Terminals:SolderableperMIL-STD-202,Method208 ●Polarity:CathodeBand ●Marking:CathodeBandOnly ●Weight:0.05grams(approx.) MechanicalData ●FastSwitchingSpeed ●SurfaceMountPackageIdeallySuitedforAutomaticInsertion ●ForGeneralPur

DIODES

Diodes Incorporated

BAV103

UltrafastSwitchingSurfaceMountSi-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

Diotec

Diotec Semiconductor

BAV103

Ultrafastsiliconrectifierdiodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron International

賽米控丹佛斯

BAV103

Ultrafastsiliconrectifierdiodes

SemikronSemikron International

賽米控丹佛斯

BAV103

Singlegeneral-purposeswitchingdiodes

Generaldescription Singlegeneral-purposeswitchingdiodes,fabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSurface-MountedDevice(SMD)packages. Features ●Highswitchingspeed:trr≤50ns ●Lowleakagecurrent ●Lowcapacitance:Cd

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BAV103

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂股份有限公司

BAV103

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●?HighVoltageSwitchingDevice ?●MiniMelfpackage ?●Surfacedevicetypemounting ?●Hermeticallysealedglass ?●Compressionbondedconstruction ?●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ?●RoHScompliant ?●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

BAV103

HighVoltage,GeneralPurposeDiode

Features ●SiliconEpitaxialPlanarDiodes ●Forgeneralpurpose

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

BAV103

SmallSignalSwitchingDiodes,HighVoltage

Features ?SiliconEpitaxialPlanarDiodes ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Generalpurposes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV103

SuperfastSwitchingSurfaceMountSi-Diodes

Diotec

Diotec Semiconductor

BAV103

HIGHSPEEDSWITCHINGDIODES

FEATURES: ?Switchingspeed:max.50ns ?Generalapplication ?Continuousreversevoltage:max.50V,100V,150Vand200Vrespectively ?Repetitivepeakreversevoltage:max.60V,120V,200Vand250Vrespectively ?Repetitivepeakforwardcurrent:max.625mA. ?Pb/RoH

EIC

EIC discrete Semiconductors

BAV103

Singlegeneral-purposeswitchingdiodes

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    ATP103-TL-H

  • 功能描述：

    MOSFET P-CH 30V 55A ATPAK

  • RoHS：

    是

  • 類別：

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點(diǎn)：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時(shí)的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON/安森美
21+
NA
2540
只做原裝,假一罰十
 詢價(jià)
onsemi(安森美)
23+
ATPAK-3
9908
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
ONSEMI/安森美
23+
DPAKTO-252
360000
專業(yè)供應(yīng)MOS/LDO/晶體管/有大量?jī)r(jià)格低
 詢價(jià)
ON
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
三年內(nèi)
1983
只做原裝正品
 詢價(jià)
ON/安森美
2021+
TO-252
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
ONN
2021++
2540
絕對(duì)進(jìn)口原裝,現(xiàn)貨熱銷
 詢價(jià)
ON/安森美
23+
TO-252
10000
公司只做原裝正品
 詢價(jià)
ON/安森美
21+
NA
12820
只做原裝,質(zhì)量保證
 詢價(jià)
ON/安森美
22+
TO-252
6000
十年配單,只做原裝
 詢價(jià)
更多ATP103-TL-H供應(yīng)商 更新時(shí)間2024-12-25 17:24:00

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