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ASM3112C

VERYLOW-COSTVOICESYNTHESIZERWITH4-BITMICROPROCESSOR

1.0GeneralDescription TheASM3112C/4112Cisverylowcostvoicesynthesizerwith4-bitmicroprocessor.Ithasvarious featuresincluding4-bitALU,ROM,RAM,I/Oports,timers,clockgenerator,watchdogtimer(WDT) voicesynthesizer,etc.Itconsistsof22instructionsinthedevice.Wit

APLUS

Aplus Intergrated Circuits

AW3112

30V/3AlowsaturationPNPtrIpoleintegratedwithNMOSFET

AWINICShanghai awinic technology co.,ltd

艾為電子上海艾為電子技術(shù)股份有限公司

AW3112DNR

30V/3AlowsaturationPNPtrIpoleintegratedwithNMOSFET

AWINICShanghai awinic technology co.,ltd

艾為電子上海艾為電子技術(shù)股份有限公司

BA3112

MonolithicIGs

MonolithicIGs ICsforAudioApplications ?CDAmplifiers ?Low-Frequency,Small-SignalAmplifiers

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

C3112

TYPECMP/CL3P

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

GENERALGeneral Cable Technologies Corporation

通用電氣公司美國(guó)通用電氣公司

CBC3112

AmbiqAM1803RTCPowerBackupwithEnerChipBattery

CYMBET

Cymbet Corporation

CBC3112

MicrochipMDP79410RTCPowerBackupwithEnerChipBattery

CYMBET

Cymbet Corporation

CBC3112

EnerChipCCwithIntegratedPowerManagement

CYMBET

Cymbet Corporation

CBC3112

EnerChipCCBackupPowerforEpsonRX-8564Real-TimeClock

CYMBET

Cymbet Corporation

CBC3112

EpsonRX-8564RTCPowerBackupwithEnerChipBattery

CYMBET

Cymbet Corporation

CEB3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CED3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEF3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,11.9A,RDS(ON)=11mW@VGS=10V. RDS(ON)=15mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEZC3112

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 30V,37.8A,RDS(ON)=9.7mW@VGS=10V. RDS(ON)=14mW@VGS=4.5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CM3112

150mA/1.2VCMOSLDORegulator

ProductDescription TheCM3112-12isalowquiescentcurrent(90uA)regulatorthatdeliversupto150mAofloadcurrentatafixed1.2Voutput.Allthenecessarycircuitryhasbeenincludedtodelivera50?powergoodsignal(opendrain)whichremainsfor5msaftertheoutputhasexceeded90(typ

CALMIRCO

California Micro Devices Corp

CPH3112

DC/DCConverterApplications

DC/DCConverterApplications Features ?AdoptionofMBITprocesses. ?Highcurrentcapacitance. ?Lowcollector-to-emittersaturationvoltage. ?Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim(0.9mm). ?Highallowablepowerdissipation. Applications ?Relaydriv

SANYOSanyo Semicon Device

三洋三洋電機(jī)株式會(huì)社

DMN3112S

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features ?LowOn-Resistance: ?57m?@VGS=10V ?112m?@VGS=4.5V ?LowGateThresholdVoltage ?LowInputCapacitance ?FastSwitchingSpeed ?LowInput/OutputLeakage ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(

DIODES

Diodes Incorporated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NXP/恩智浦
2122+
SMD
25500
全新原裝正品現(xiàn)貨,假一賠十
詢價(jià)
NXP/恩智浦
22+
SMD
18000
原裝正品
詢價(jià)
NXP/恩智浦
2023+
SMD
6895
原廠全新正品旗艦店優(yōu)勢(shì)現(xiàn)貨
詢價(jià)
NXP/恩智浦
22
SMD
15000
3月31原裝,微信報(bào)價(jià)
詢價(jià)
NXP/恩智浦
24+
SMD
860000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)
NXP
20+
射頻元件
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
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NXP
22+
144LQFP
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
NXP
21+
144LQFP
13880
公司只售原裝,支持實(shí)單
詢價(jià)
NXP
23+
144LQFP
9000
原裝正品,支持實(shí)單
詢價(jià)
ADVANSYS
16+
QFP
950
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
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更多ASC3112HV供應(yīng)商 更新時(shí)間2025-1-4 16:00:00