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APT5020BNR

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=28A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT5020BVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecovery

ADPOW

Advanced Power Technology

APT5020BVFR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT5020BVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT5020BVR

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT5020DN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=26A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchmodep

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT5020SLC

PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSVI?isanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss. LowergatechargecoupledwithPowerMOSVI?optimizedgatelayout,deliversexceptionall

ADPOW

Advanced Power Technology

APT5020SVFR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody

ADPOW

Advanced Power Technology

APT5020SVR

PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitc

ADPOW

Advanced Power Technology

AS5020

6-BITMAGNETICANGULARPOSITIONENCODERWITHSERIALINTERFACE

GeneralDescription Thedeviceprovidestheabsoluteangularpositionofasimplemagnetthatisplacedunderorabovethedevice’ssurface.ThedeviceincludestheHallSensorArray,signalconditioningandpostprocessingneededtogeneratea6-bitbinarycode.Thebinarycodecanbeeasilyacc

AMSCOams AG

艾邁斯歐司朗艾邁斯歐司朗股份公司

詳細(xì)參數(shù)

  • 型號(hào):

    APT5020BNFR

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 28A I(D) | TO-247AD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MICROSEMI/美高森美
22+
TO-247
2769
絕對(duì)原裝!公司現(xiàn)貨!
詢價(jià)
MICROSEMI/美高森美
1814+
TO-247
2232
原裝正品 可含稅交易
詢價(jià)
MICROSEMI/美高森美
23+
TO-247
12500
全新原裝現(xiàn)貨,假一賠十
詢價(jià)
MICROSEMI/美高森美
TO-247
23+
6000
專(zhuān)業(yè)配單原裝正品假一罰十
詢價(jià)
APT
24+
TO-247
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
詢價(jià)
Microsemi/美高森美
1922+
TO-247
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價(jià)
MICROSEMI/美高森美
20+
TO-247
2800
絕對(duì)全新原裝現(xiàn)貨,歡迎來(lái)電查詢
詢價(jià)
MICROSEMI/美高森美
24+
TO-247
33650
所有報(bào)價(jià)以當(dāng)天為準(zhǔn)
詢價(jià)
MICROSEMI/美高森美
24+
TO-247
18500
授權(quán)代理直銷(xiāo),原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷(xiāo)售
詢價(jià)
MICROSEMI
21+
TO-247
2465
原裝現(xiàn)貨假一賠十
詢價(jià)
更多APT5020BNFR供應(yīng)商 更新時(shí)間2025-1-17 14:12:00