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FQB8P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB8P10

P-ChannelQFET?MOSFET-100V,-8.0A,185m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQB8P10TM

P-ChannelQFET?MOSFET-100V,-8.0A,185m廓

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD8P10

P-ChannelQFET?MOSFET-100V,-6.6A,530m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD8P10

100VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD8P10TF

P-ChannelQFETMOSFET-100V,-6.6A,530m

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD8P10TM

100VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQD8P10TM

P-channelEnhancementModePowerMOSFET

Features ?VDS=-100V,ID=-13A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FQI8P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQP8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8.0A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.53Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

FQP8P10

100VP-ChannelMOSFET

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQPF8P10

100VP-ChannelMOSFET

GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU8P10

100VP-ChannelMOSFET

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU8P10

P-ChannelQFET?MOSFET-100V,-6.6A,530m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

FQU8P10TU

P-ChannelQFET?MOSFET-100V,-6.6A,530m廓

Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

KSM8P10

100VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD8P10

100VP-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMU8P10

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

MTM8P10

POWERFIELDEFFECTTRANSISTOR

PowerFieldEffectTransistor P-ChannelEnhancement-ModeSiliconGateTMOS TMOSPOWERFETs8AMPERES rDS(on)=0.4OHM80and100VOLTS

Motorola

Motorola, Inc

MTM8P10

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-8A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

供應商型號品牌批號封裝庫存備注價格
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
ST
00+/01+
TQFP
268
全新原裝100真實現貨供應
詢價
MTI
0001-
308
公司優(yōu)勢庫存 熱賣中!
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Altech Corporation
2022+
原廠封裝
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
LS/電氣
30000
原裝正品,全系列可訂貨
詢價
ASSMANN
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
ASSMANN
2023+
DIP
8700
原裝現貨
詢價
Assmann WSW Components
23+
原廠封裝
18
只做原裝只有原裝現貨實報
詢價
DIODES
21+
TSSOP20
861
原裝現貨假一賠十
詢價
DIODES
22+
TSSOP20
25000
原裝現貨,價格優(yōu)惠,假一罰十
詢價
更多AP8P10S供應商 更新時間2024-11-19 11:06:00