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AORN1002BUF

Molded, 50 mil Pitch, Dual-In-Line Thin Film Resistor, Precision Automotive, AEC-Q200 Qualified, Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002CTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002CTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002CUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015) ?LowTCRtracking±5ppm/°C ?Passessulfurresistancet

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002FTF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002FTS

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

AORN1002FUF

Molded,50milPitch,Dual-In-LineThinFilmResistor,PrecisionAutomotive,AEC-Q200Qualified,Networks

FEATURES ?Moistureresistanttantalumnitrideresistivefilm (MILSTD202,method106) ?Standard8pincount(0.150narrowbody) JEDEC?MS-012 ?Ruggedmoldedcaseconstruction ?Excellentlongtermratiostability (ΔR±0.015%) ?LowTCRtracking±5ppm/°C ?Passessulfurresista

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

APT1002RAN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1002RBN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RBN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1002RCN

N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

POWERMOSIV? N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS

ADPOW

Advanced Power Technology

APT1002RCN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=5.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

APT1002RDN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ARJ-1002

GIGABITRJ45LANMAGNETIC

ABRACON

Abracon Corporation

ASI1002

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI1002isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto1500MHz. FEATURES: ?PG=12dBminat2W/1,000MHz ?HermeticMicrostripPackage ?Omnigold?MetalizationSystem

ASI

Advanced Semiconductor

AT-1002

HighPowerFixedAttenuators(Radiatorbuilt-in)

HighPowerFixedAttenuators(Radiatorbuilt-in) ■Features 1.SmallSizeandEconomical Berylliaisusedforthematerialoftheresistanceelementtoenabletheterminationtobeofsmallsizeandlowcost. 2.ConnectorsUsed Inthecouplingportion,theAT-1000SerieshasanSMAt

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

AU-Y1002-A

CABLE28AWG,UL2725

ASSMANN

ASSMANN WSW COMPONENTS

AXHV1002

VCO-VoltageControlledOscillator

AXTALAdvanced XTAL Products

advanced XTAL Products

B1002ERW

LowCost1x2Inch10WWideInputRangeDC/DCConverters

MPD

MPD (Memory Protection Devices)

B1002R

10W,5VDCInputCompact,DualOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

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11
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TO252
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更多AORN1002BUF供應(yīng)商 更新時(shí)間2024-12-23 14:18:00