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AON6426L

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAON6426LcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. -RoHSCompliant -HalogenFree Features VDS(V)=30V ID=24A(VGS=

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

AON6426L

DFN 5X6 PACKAGE MARKING DESCRIPTION

AOSMDAlpha & Omega Semiconductors

萬國半導(dǎo)體美國萬國半導(dǎo)體

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.6A,RDS(ON)=90mW@VGS=10V. RDS(ON)=110mW@VGS=4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEA6426

N-Channel0-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET APPLICATIONS ?LoadSwitchesforPortableDevices

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

CEA6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,3A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-89package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEB6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CED6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,4.7A,RDS(ON)=66mW@VGS=10V. RDS(ON)=85mW@VGS=4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEM6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.7A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■SurfacemountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEP6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,17A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CET6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,4.5A,RDS(ON)=90mΩ@VGS=10V. RDS(ON)=110mΩ@VGS=4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-223package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 60V,16A,RDS(ON)=66mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS( Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=85mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,16A,RDS(ON)=66mΩ@VGS=10V. RDS(ON)=85mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEU6426

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,34A,RDS(ON)=25mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CHM6426JPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT4.7Ampere FEATURE *Smallflatpackage.(SO-8) *SuperHighdensitycelldesignforextremelylowRDS(ON). *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT16Ampere FEATURE *HighdensitycelldesignforextremelylowRDS(ON). *Smallpackage.(TO-252A) APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

CHM6426XPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT3Ampere FEATURE *Smallpackage.(SC-62/SOT-89) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHENMKOchenmko

力勤股份有限公司

DNB6426

RectifierDiode

FEATURES ■DoubleSideCooling ■HighSurgeCapability APPLICATIONS ■Rectification ■FreewheelDiode ■DCMotorControl ■PowerSupplies ■Welding ■BatteryChargers

Dynex

Dynex Semiconductor

G6426-A

MagAmpToroids??G642XSeries

COILCRAFTCoilcraft lnc.

線藝美國線藝公司

詳細參數(shù)

  • 型號：

    AON6426L

  • 制造商：

    AOSMD

  • 制造商全稱：

    Alpha & Omega Semiconductors

  • 功能描述：

    N-Channel Enhancement Mode Field Effect Transistor

供應(yīng)商型號品牌批號封裝庫存備注價格
AOS/萬代
24+
DFN5X6
12884
只做原廠渠道 可追溯貨源
 詢價
AOS/萬代
21+
DFN
9800
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
AOS
2016+
DFN8
1929
十七年VIP會員,誠信經(jīng)營，一手貨源，原裝正品可零售！
 詢價
AOS/萬代
24+
DFN5x6
333888
AOS原裝正品專業(yè)直銷
 詢價
AOS
2020+
DFN8
985000
100%進口原裝正品公司現(xiàn)貨庫存
 詢價
AOS
21+
DFN8
12588
原裝現(xiàn)貨價格優(yōu)勢
 詢價
AOS
22+
QFN5X6
34316
原裝正品現(xiàn)貨
 詢價
AOS
2020+
DFN
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
AOS
24+
DFN8
9860
原裝現(xiàn)貨/放心購買
 詢價
AOS/萬代
23+
DFN5x6
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
更多AON6426L供應(yīng)商 更新時間2025-1-2 16:36:00

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